An (un)solvable problem in SIMS: B-interfacial profiling

Vandervorst, Wilfried; Janssens, Tom; Loo, Roger; Caymax, Matty; Peytier, I.; Lindsay, Richard; Frühauf, Jens; Bergmaier, A.; Dollinger, G.

doi:10.1016/s0169-4332(02)00678-5

Cited by 23 publications

(11 citation statements)

References 4 publications

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“…4 The first Ϸ5 nm of the SIMS profile is nonquantitative and caused by nonequilibrium sputtering yields. Uniformity measurements were found to give a repeatability of Ͻ0.1% standard deviation.…”

Section: Methodsmentioning

confidence: 99%

Effect of implant oxide on ultrashallow junction formation

Lindsay

Lauwers

Frühauf

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors Two-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon

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Section: Methodsmentioning

confidence: 99%

Effect of implant oxide on ultrashallow junction formation

Lindsay

Lauwers

Frühauf

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…An example of the different approaches is plotted in Fig. 5 [37], showing boron profiles of test structures for ultra-shallow junctions obtained from SIMS and from high resolution ERD. The structures were produced by implanting 1 keV boron at three different doses through 1.8 nm SiO 2 on crystalline silicon followed by a thermal treatment.…”

Section: Ultra Shallow Junctionsmentioning

confidence: 99%

Doping Density Depth Profiling Analysis with High Resolution Elastic Recoil Detection

Bergmaier¹,

Dollinger²

2007

ECS Trans.

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The quantitative analysis of light elements in ultra thin films thinner than 10 nm is still a nontrivial task. This paper summarizes the prospects of high-resolution Elastic Recoil Detection (ERD) using a Q3D magnetic spectrograph. It is shown that sub-nanometer resolution can be achieved in ultra thin films and even monolayer resolution is possible close to the surface. ERD has the best quantification possibilities compared to any other method. Sensitivity is sufficient to analyze main elements and impurities as e.g. necessary for the characterization of microelectronic materials. In addition, high-resolution channeling ERD can be performed in order to obtain information on lattice location of light elements in crystalline ultra thin layers. The potential of high-resolution ERD is demonstrated by several applications where it is the most valuable tool for elemental profiling.

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“…2 In recent years, a "nonoxidizing" approach resulted in a more accurate identification of the profile shape as revealed by comparing SIMS results with nuclear techniques such as elastic recoil detection analysis. However, when facing ultrashallow junctions for nowadays source and drain extensions in Si complementary metal oxide semiconductor devices, several issues need to be addressed.…”

Section: Introductionmentioning

confidence: 99%

Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques

Giubertoni

Iacob

Hoenicke

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon Secondary ion mass spectrometry characterization of the diffusion properties of 17 elements implanted into silicon J.Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry Study of pre-equilibrium sputter rates for ultrashallow depth profiling with secondary ion mass spectrometry Boron ultralow energy ͑0.2-3 keV͒ high dose ͑1 ϫ 10 15 cm −2 ͒ implants in single crystalline Si ͑100͒ were characterized by secondary ion mass spectrometry using an ultralow energy ͑0.35-0.5 keV͒ O 2 + ion primary beam and collecting positive secondary ions. In particular, the not fully oxidizing approaches ͑primary beam oblique incidence and ultrahigh vacuum analysis atmosphere͒ were investigated because they are expected to provide better accuracy on the profile shape, especially in the region between the surface and the native oxide/substrate interface. The main drawback represented by an early formation of roughness on the crater bottom has been overcome by combining the ion sputtering with the rotation of the sample during the analysis. The reduced formation of roughness ensures more stable sputtering conditions and a more stable erosion rate with a more accurate depth calibration. The measured dose values were then cross-checked comparing them with results of soft x-ray synchrotron radiation grazing incidence x-ray fluorescence.

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An (un)solvable problem in SIMS: B-interfacial profiling

Cited by 23 publications

References 4 publications

Effect of implant oxide on ultrashallow junction formation

Effect of implant oxide on ultrashallow junction formation

Doping Density Depth Profiling Analysis with High Resolution Elastic Recoil Detection

Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques

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