An Ultrathin Flexible Programmable Spin Logic Device Based on Spin–Orbit Torque

Abstract

Flexible electronic devices have shown increasingly promising value facilitating our daily lives. However, flexible spintronic devices remain in their infancy. Here, this research demonstrates a type of nonvolatile, low power dissipation, and programmable flexible spin logic device, which is based on the spin−orbit torque in polyimide (PI)/Ta/Pt/Co/Pt heterostructures fabricated via capillary-assisted electrochemical delamination. The magnetization switching ratio is shown to be about 50% for the flexible device and does not change after 100 cycles of bending, indicating the device has stable performance. By designing the path of pulse current, five Boolean logic gates AND, NAND, NOT, NOR, and OR can be realized in an integrated two-element device. Moreover, such peeling-off devices can be successfully transferred to almost any substrate, such as paper and human skin, and maintain high performance. The flexible PI/Ta/Pt/Co/Pt spin logic device serves as logic-in-memory architecture and can be used in wearable electronics.

Solar-Powered Switch of Antiferromagnetism/Ferromagnetism in Flexible Spintronics

“…The schematic of a flexible PET/Co (2.5 nm)/Mo (2.8 nm)/Co (2.5 nm)/(PC71BM:PTB7-Th)/Pt (1 nm) heterostructure is illustrated in Figure 1a, to be used as a wearable electronic device. The two organic formulas of poly- [4,8-bis(5-(2-ethylhexyl) [3,4-b] thiophene-2-carboxylate] (PTB7-Th) and [6,6]phenyl C71 butyric acid methylester (PC71BM) are used as the electron donor and acceptor, respectively (Figure S1). These organic photovoltaic (OPV) molecules represent the most efficient donor-acceptor pair in the Fullerene system, in which the power conversion efficiency is over 10% [43,44].…”

“…Flexibility endows electronics with portable, bendable, foldable, and lightweight features, making them increasingly interesting in both the marketing and scientific fields. In addition to these advantages, flexible spintronics possess the merits of energy efficiency and high integration density, opening up possibilities for various applications [1][2][3][4][5][6][7]. Nowadays, the study of spin flips under strain/stress effects fascinates researchers due to its intriguing physical properties.…”

Materials and Structural Designs toward Motion Artifact-Free Bioelectronics

“…With the concept of a threshold, when a function operates from a specific amount of stimulus or higher, it can be used as a method of removing noise. Representative methods include using a sensor that implements a logic circuit and using a sensor with a band filter function. ,− Figure a–d shows logic gate sensors. , In Figure a,b, materials and device design/fabrication strategies for an array of semiconducting single-walled nanotube (s-SWNT)-based stretchable electronic devices consisting of capacitors, charge-trap floating-gate memory units, and logic gates are shown Figure c,d shows a logic sensor that operates by strain .…”

Electrical-Controllable Antiferromagnet-Based Tunnel Junction

“…Notably, nonrotatable IrMn moments can be simultaneously switched under SOT induced by current I ,,, (Figure c), but cannot be switched under magnetic field H (Figure b). This unique property lays the foundation for the realization of logic functions. − Therefore, within a single antiferromagnet-based tunnel junction device, the exchange spring in IrMn enables information storage, electrical reading, and electrical writing, while the additional exchange bias effect facilitates the demonstration of logic function. Besides, because nonrotatable IrMn moments that determine the exchange bias are located at the interface between IrMn and PMA, the exchange bias switching will not generate TAMR across the MgO interface.…”