An Ultralow-Power On-Die PMU in a 28-nm CMOS SoC With Direct Li-Ion Battery-Attach Capability

Shi, Chunlei; Duncan, Joseph; Pu, Yu; Liu, Gang; Homayoun, Aliakbar; Attar, Rashid

doi:10.1109/jestpe.2017.2782623

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…Indeed, in previous work 54 a bandgap reference in 28‐nm technology with 5‐V maximum supply is reported, but it exhibits a current consumption of 2.5 μ A and a TR of only 150°C. The 28‐nm PMU in 55 operates at 5 V, with a 1‐ μ A bandgap reference, but the TR and the TC are not provided. The 5‐V sub‐microampere bandgap reported in previous work, 56 designed in a 180‐nm technology node, exhibits a temperature range of 170°C, but it is not compatible with a voltage supply lower than 2 V. The 350‐nm voltage reference proposed in previous work 57 is compatible with Li‐Ion battery voltage range, but it exhibits a minimum supply voltage of 2.8 V and a temperature range of 80°C.…”

Section: Resultsmentioning

confidence: 99%

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Caselli

Liempd

Boni

et al. 2021

Circuit Theory & Apps

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Summary The paper describes the implementation of a bandgap reference based on native‐MOSFET transistors for low‐power sensor node applications. The circuit can operate from −55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military‐aerospace applications, and for direct Li‐Ion battery attach. Moreover, the circuit can operate without any dedicated start‐up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55‐nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample‐to‐sample variation within 57 mV, with a current consumption of 420 nA at 27°C.

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Section: Resultsmentioning

confidence: 99%

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Caselli

Liempd

Boni

et al. 2021

Circuit Theory & Apps

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“…With the development of SoC modules, LDOs are being integrated with single-chip solutions to achieve on-chip power management. Compared to a DLDO, an ALDO offers fast load transient response, high PSR, and large bandwidth with low quiescent current [6]; it also alleviates the need for a clock signal, which is important as the issue of clock glitch presents additional design challenges [17]. When integrating an LDO into an SoC module, an OCL-LDO architecture is preferred, as the need for a bulky external capacitor is removed; this reduces the pin counts of the chip and eliminates the inherent parasitic related to the external capacitor, which can adversely impact the performance at high frequency [22].…”

Section: State-of-the-art Aldo Topologiesmentioning

confidence: 99%

“…The Internet of Things (IoT) and Internet of Everything (IoE) represent the core of Industry 4.0 [1], [2] and are crucial to cater to the growing demand for technologies based on mobile and portable devices, such as radio frequency identification (RFID) [3], smart factories equipped with advanced technologies, machine-to-machine (M2M) and machine-to-human (M2H) communication [4], along with IoT edge sensors [5]. As these applications of IoTs are now becoming mainstream, system-on-chip (SoC) modules are a viable option [6] due to the wide variety of such applications. SoCs consist of multiple individual blocks, with dedicated voltage, power and current requirements, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Evaluation and Perspective of Analog Low-Dropout Voltage Regulators: A Review

et al. 2022

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Low-dropout regulators (LDOs) are widely adopted in power management integrated circuits (PMICs) and serve as a bridge between the switching regulators and individual on-chip modules to provide a smooth, regulated output voltage. Compared to digital LDOs (DLDOs), analog LDOs (ALDOs) lead in the advantage of low output ripple and large power supply rejection (PSR). However, the preference of achieving high performance in terms of load transient, high PSR, good load and line regulation, while maintaining a low quiescent current and low dropout voltage for high efficiency, remains the key challenge in ALDO design. For operation with a low quiescent current, the bandwidth is reduced due to low transconductance, resulting in the limited gate driving capabilities in terms of charging and discharging the large gate capacitance of the pass or output transistor. In addition, the preference for system-on-chip design in the absence of large off-chip capacitors arises stability issues. In this paper, recent reported state-of-theart architectures for ALDOs are revisited and reviewed. The performance of these ALDOs is compared and their applications are investigated.INDEX TERMS Linear low-dropout regulators (LDOs), power management integrated circuits (PMICs), analog LDOs (ALDO), capacitor-less output, adaptive biasing, bulk modulation, power supply rejection (PSR), flipped voltage follower (FVF), charge pump.

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Chip implementation of low-power high-efficient buck converter for battery-powered IOT applications

Hsia,

Hsieh

2024

Analog Integr Circ Sig Process

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An Ultralow-Power On-Die PMU in a 28-nm CMOS SoC With Direct Li-Ion Battery-Attach Capability

Cited by 8 publications

References 3 publications

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Evaluation and Perspective of Analog Low-Dropout Voltage Regulators: A Review

Chip implementation of low-power high-efficient buck converter for battery-powered IOT applications

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