An ultra-narrow FinFET poly-Si gate structure fabricated with 193nm photolithography and in-situ PR/BARC and TEOS hard mask etching

Liao, Wen‐Shiang; Wu, Cheng-Han; Tang, Mao-Chyuan; Huang, Sheng‐Yi; Shih, Tommy; Liaw, Yue-Gie; Chen, Kun-Ming; Chen, Tung-Hung; Tsen, Huan-Chiu; Chung, Lee

doi:10.1117/12.769591

SPIE Proceedings

2008

DOI: 10.1117/12.769591

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An ultra-narrow FinFET poly-Si gate structure fabricated with 193nm photolithography and in-situ PR/BARC and TEOS hard mask etching

Wen‐Shiang Liao

Cheng-Han Wu

Mao-Chyuan Tang

et al.

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An ultra-narrow FinFET poly-Si gate structure fabricated with 193nm photolithography and in-situ PR/BARC and TEOS hard mask etching

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