An Ultra Low Power CMOS Photonics Technology Platform for H/S Optoelectronic Transceivers at less than $1 per Gbps

Narasimha, A.; Abdalla, Sherif; Bradbury, C.; Clark, A.G.; Clymore, Jim; Coyne, James; Dahl, A.; Gloeckner, S.; Gruenberg, Alberto; Guckenberger, D.; Gutierrez, S.; Harrison, Mark C.; Kucharski, D.; Leap, Kosal; LeBlanc, R.; Liang, Yi; Mack, M.; Martinez, D.; Masini, G.; Mekis, Attila; Menigoz, Ron; Ogden, Carl; Peterson, Mark; Pinguet, Thierry; Redman, J.; Rodríguez, José Mendoza; Sahni, S.; Sharp, M.; Sleboda, T.J.; Song, Dalei; Wang, Yanxin; Welch, B.; Witzens, Jeremy; Xu, Wei; Yokoyama, K.; Dobbelaere, P. De

doi:10.1364/ofc.2010.omv4

Cited by 49 publications

(29 citation statements)

References 2 publications

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“…These devices however, were only demonstrated to operate for TE polarisation and the fabrication process was relatively complex (includes processes such as epitaxial growth) . Further to this work, a plethora of carrier depletion based modulators, compatible with data transmission at speeds of at least 10 Gb/s, were demonstrated [5][6][7][8][9][10][11][12][13][14][15][16]; the Intel device [4] however, is currently the fastest silicon optical modulator reported to date.…”

Section: Introductionmentioning

confidence: 87%

40 Gb/s silicon photonics modulator for TE and TM polarisations

Gardes¹,

Thomson²,

Emerson³

et al. 2011

Opt. Express

156

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A key device in future high speed short reach interconnect technology will be the optical modulator. These devices, in silicon, have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Here we describe an approach based on a self-aligned wrap around p-n junction structure embedded in a silicon waveguide that can produce high-speed optical phase modulation, whilst at the same time, capable of a high extinction ratio. An all-silicon optical modulator using a CMOS compatible fabrication process with a data rate of 40 Gb/s and extinction ratio up to approximately 6.5 dB for TE and TM polarisations is demonstrated. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to simplify and improve the reliability of, the fabrication process. Kaertner, and T. M. Lyszczarz, "High-speed silicon electro-optical modulator that can be operated in carrier depletion or carrier injection ©2011 Optical Society of America

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Section: Introductionmentioning

confidence: 87%

40 Gb/s silicon photonics modulator for TE and TM polarisations

Gardes¹,

Thomson²,

Emerson³

et al. 2011

Opt. Express

156

View full text Add to dashboard Cite

show abstract

“…An advantage of this device design is the simplicity of the fabrication process used to form the device. In previously reported devices the pn junction is positioned within the waveguide rib region necessitating critical alignment of the doping steps [2][3][4][6][7][8][9][10][11][12]. Alignment errors are typical of any fabrication process and can result in device performance variations or even failure.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…A change in the phase of the light exiting the waveguide then occurs with changing depletion width due to the resultant change in effective refractive index. In recent years an abundance of devices following this approach have been reported demonstrating a performance at or around 10Gbit/s [2][3][4][5][6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

High contrast 40Gbit/s optical modulation in silicon

Thomson¹,

Gardes²,

Hu³

et al. 2011

Opt. Express

273

138

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Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively. ©2011 Optical Society of America

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“…The components required to realise a transceiver for a high speed data transmission link have been developed to the stage where commercial products based upon this technology have reached the market [1]. To date, most of the research into the individual components required for such a transceiver has been focused on the traditional telecommunication wavelength bands around 1.3μm and 1.55μm.…”

Section: Introductionmentioning

confidence: 99%

Optical detection and modulation at 2µm-25µm in silicon

et al. 2014

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Abstract:Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm. Kaertner, and T. M. Lyszczarz, "CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band," IEEE Photon.

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An Ultra Low Power CMOS Photonics Technology Platform for H/S Optoelectronic Transceivers at less than $1 per Gbps

Cited by 49 publications

References 2 publications

40 Gb/s silicon photonics modulator for TE and TM polarisations

40 Gb/s silicon photonics modulator for TE and TM polarisations

High contrast 40Gbit/s optical modulation in silicon

Optical detection and modulation at 2µm-25µm in silicon

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