An Ultra-Low Power CMOS Integrated Pulse-Width Modulated Temperature Sensor

Azam, Ali; Bai, Zhidong; Walling, Jeffrey S.

doi:10.1109/jsen.2020.3019324

Cited by 10 publications

(5 citation statements)

References 32 publications

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“…This sensor system consumes a power of 11.9 µW during its on-state. In [46], an integrated pulse width modulated (PWM) temperature sensor is proposed. The power consumption of this sensor is 47.2 nW (for 27 • C) and 17.6 nW (for −20 • C).…”

Section: Temperature Sensorsmentioning

confidence: 99%

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A New RF Energy Harvesting System Based on Two Architectures to Enhance the DC Output Voltage for WSN Feeding

Benkalfate

Ouslimani

Kasbari

et al. 2022

Sensors

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In this paper, a new RF Energy Harvesting (RF-EH) system for Wireless Sensor Network (WSN) feeding is proposed. It is based on two different monitored architectures using switch circuits controlled by the input powers. One architecture is more adapted to high input powers and the other to low input powers. The two different architectures and the system are designed and realized on Teflon glass substrate with a relative permittivity of 2.1 and thickness of 0.67 mm. They are tested separately as a function of the distance from the relay antenna. A new multiband antenna with a size of 40 × 30 mm2 is used for both architectures and the system. The measured antenna gains are 2.7 dB, 2.9 dB, and 2.55 dB for the frequencies of 1.8 GHz, 2.1 GHz, and 2.66 GHz corresponding to the mobile communication networks, respectively. The rectifier consists of two Schottky diodes forming a full-wave rectifier and voltage doubler. The maximum measured RF-to-DC conversion efficiency is 71.5%. The proposed RF-EH system provides a maximum DC output voltage of 5.6 V and 3.15 V for an open and 2 kΩ resistance load, respectively.

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Section: Temperature Sensorsmentioning

confidence: 99%

“…At 122 m, the second architecture provides an almost null DC power that doesn't allow for the feeding of these sensors. [45,46], respectively.…”

Section: Temperature Sensorsmentioning

confidence: 99%

A New RF Energy Harvesting System Based on Two Architectures to Enhance the DC Output Voltage for WSN Feeding

Benkalfate

Ouslimani

Kasbari

et al. 2022

Sensors

View full text Add to dashboard Cite

show abstract

“…Note that these sensors are widely employed for the on-chip thermal management of integrated circuits and, hence, the area and power overload caused by the thermal sensor(s) should be as low as possible [34]. For instance, a silicon sensor based on MOSFET transistors operating in weak inversion with a power consumption of tens of nW was suggested in [35]. This sensor, however, had a limited temperature range from 20 to +80ºC and an inaccuracy up to 2.5ºC.…”

Section: E New Trendsmentioning

confidence: 99%

A Tutorial on Thermal Sensors in the 200th Anniversary of the Seebeck Effect

Reverter

2021

IEEE Sensors J.

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Two noteworthy events associated to the physics of thermal sensors were demonstrated and announced in 1821, exactly two hundred years ago. The first event was the Seebeck effect, which led to the development of thermocouples. The second was the study of the thermal dependence of the resistivity of pure metals, which led to the design of resistance temperature detectors (RTD). Sensors' science and technology has experienced remarkable advances in the last decades, but these two types of thermal sensors, whose physics were announced 200 years ago, are still nowadays the main sensor technology in many industrial applications that require the measurement of extreme temperatures. In such a 200 th anniversary, this tutorial aims to explain the operating principle, subtypes, input-output characteristic, limitations, and new trends under research of the four main types of thermal sensor: RTDs, thermistors, silicon sensors, and thermocouples. These are also compared with each other, highlighting the main advantages and disadvantages of each sensor technology.

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“…Integrated temperature sensors can be achieved in many different ways, e.g., as p-n diodes [5], oscillators [6], bipolar transistors [7], or proportional to absolute temperature (PTAT) sensors [8][9][10][11][12][13]. According to the amount of dissipated, one could distinguish also low-power temperature sensors [14][15][16]. Temperature sensors can be used for various purposes, including IC overheat protection [17] as well as in Internet of Things (IoT) [18] and embedded [19,20] or space applications [16].…”

Section: Introductionmentioning

confidence: 99%

Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology

Szermer,

Jankowski,

Janicki

2024

Electronics

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This paper presents the design of an integrated temperature sensor. The sensor was manufactured using the 3 µm CMOS technology. The proportional to absolute temperature sensor output signal was produced by two MOS transistors with biasing and buffering circuits. The sensor output voltage was linearly proportional to the absolute temperature in a wide range of temperature values. The measurement results coincide very well with the results of the process corner analysis. Certain non-linearities occurring at high temperature values are investigated in this paper in more detail. Additionally, the influence of neighboring circuits present in the manufactured integrated circuit on the sensor temperature response is studied.

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An Ultra-Low Power CMOS Integrated Pulse-Width Modulated Temperature Sensor

Cited by 10 publications

References 32 publications

A New RF Energy Harvesting System Based on Two Architectures to Enhance the DC Output Voltage for WSN Feeding

A New RF Energy Harvesting System Based on Two Architectures to Enhance the DC Output Voltage for WSN Feeding

A Tutorial on Thermal Sensors in the 200th Anniversary of the Seebeck Effect

Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology

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