2016
DOI: 10.1039/c6ra19131b
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An ultra-long and low junction-resistance Ag transparent electrode by electrospun nanofibers

Abstract: An ultra-long PVDF/SnCl2 nanofiber transparent conducting electrode with high transmittance, low sheet resistance and good flexibility was fabricated at ambient temperature onto a flexible substrate via combining electrospinning and electroless metal deposition methods.

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Cited by 31 publications
(26 citation statements)
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“…Long nanowires have been fabricated in an attempt to overcome the limitations of 1-D metal nanowire networks; additionally, numerous studies have been carried out to reduce the number of junctions, which is the biggest contributor to the increase in sheet resistance 12 . Electrospinning is one of the most popular techniques for fabricating ultra-thin nanofibers economically, with features such as extremely long lengths, a high surface area-to-volume ratio, a small pore size, and high porosity.…”
Section: Introductionmentioning
confidence: 99%
“…Long nanowires have been fabricated in an attempt to overcome the limitations of 1-D metal nanowire networks; additionally, numerous studies have been carried out to reduce the number of junctions, which is the biggest contributor to the increase in sheet resistance 12 . Electrospinning is one of the most popular techniques for fabricating ultra-thin nanofibers economically, with features such as extremely long lengths, a high surface area-to-volume ratio, a small pore size, and high porosity.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, a good balance between sheet resistance and transparency should be achieved. The figure of merit (ΦTC) can be used for this purpose [33][34][35][36][37]. In this study, the highest figure of merit was achieved for the samples deposited for 3 minutes indicating that they have better optoelectrical properties than the other samples ( Figure 4, Table 1).…”
Section: Resultsmentioning
confidence: 64%
“…2c ; this is why all IGZO nanowires for multi-layered structures and sensing applications were fabricated at a spin-coating speed of 7,000 rpm. Meanwhile, degradation of the electrical characteristics of conventional nanowire-based devices fabricated by deposition of pre-synthesized nanowires is inevitable problem due to the existence of contact resistance at the junctions between the pre-synthesized nanowires 26 , 27 . However, the wire-type IGZO TFTs fabricated in the present study were little affected by contact resistance because each wire-type IGZO layer was fabricated via one-step deposition of IGZO, minimizing the number of junctions.…”
Section: Resultsmentioning
confidence: 99%