An ultra-high power density supercapacitor: Cu(II) phthalocyanine tetrasulfonic acid tetrasodium salt doped polyaniline

Arvas, Melih Beşir; Yazar, Sibel; Şahin, Yücel

doi:10.1016/j.jallcom.2022.165689

Cited by 18 publications

(12 citation statements)

References 93 publications

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“…This showed that the diffusion rate of mobile ions in the 1000th cycle increased compared to the situation in the initial and 2000th cycles. 16,43,74,[78][79][80] The Cdl value, on the other hand, was at the highest level after 1000 cycles, in this case, it showed that the interaction at the electrode/electrolyte interface was the highest and the double layer capacitance is the highest in these cycles. 16,43,74,[81][82][83][84] To determine the charge-discharge behavior of the supercapacitor, galvanostatic charge-discharge tests were performed to PANI/SGO/NGO-3 including supercapacitor at a current density of 0.1 A g −1 between 0 and 1.5 V (Fig.…”

Section: Resultsmentioning

confidence: 67%

S-Doped Graphene Oxide/N-Doped Graphene Oxide/PANI: A Triple Composite for High-Performance Supercapacitor Applications

Yasa,

Kumbasi,

Arvas

et al. 2023

ECS J. Solid State Sci. Technol.

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In this study, nitrogen-doped graphene oxide(N-GO) and sulfur-doped graphene oxide(S-GO) were produced in one step, and two of these prepared materials were converted into composite form with polyaniline(PANI). For the first time in the literature, triple composite electrode materials with two heteroatom-doped graphene oxides and PANI were prepared for supercapacitors. In this context, heteroatom-doped graphene oxides and PANI were characterized using spectroscopic and microscopic methods. With the ternary composites formed, anode and cathode electrode materials for coin cell type supercapacitors in asymmetrical form were characterized by electrochemical methods. The capacitive behavior of the prepared supercapacitors was investigated by cyclic voltammetry and electrochemical impedance spectroscopy method. The change of capacitive behavior according to the number of cycles was determined by cyclic charge-discharge tests. With the electrode materials obtained with heteroatom doped graphene oxides/PANI composites, it reached the highest areal capacitance value of 79.7 mF.cm-2 at 10 mV.s-1 scan rate. The coin cell type asymmetric supercapacitors retained more than 100% of their initial specific capacitance at the end of the 1500 cycle.

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Section: Resultsmentioning

confidence: 67%

S-Doped Graphene Oxide/N-Doped Graphene Oxide/PANI: A Triple Composite for High-Performance Supercapacitor Applications

Yasa,

Kumbasi,

Arvas

et al. 2023

ECS J. Solid State Sci. Technol.

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“…7a were attributed to the C-C (sp 2 ), C-O, C-N, N-CvN groups, respectively. 64,65 The peaks monitored at 398.11, 399.52 and 400.99 eV in the N 1s spectrum of the BPI-CF electrode indicated in Fig. 7b refer to the imine group (C-NvC), pyridinic N and secondary amine (C-N-H) structures, respectively.…”

Section: Dalton Transactions Papermentioning

confidence: 99%

Synthesis, fabrication and characterization of 2-naphthyloxy group-substituted bis(2-pyridylimino)isoindoline and its derivatives as a positive electrode for vanadium redox flow battery applications

et al. 2023

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“…In the equation, i X represents the feature set of fault events, including a subset of abnormal state alarm information based on signaling Di X and a subset of abnormal state alarm information based on switches Mi X , N representing the total number of fault events [6][7] .…”

Section:  mentioning

confidence: 99%

Binary Tree Algorithm-based Fault Location Method for Tripping in Ultra-high Voltage Substations

Zhou,

Shen,

Zhang

et al. 2023

J. Phys.: Conf. Ser.

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The current conventional method for fault location in substations involves using a mathematical model to convert the problem into a parameter identification problem. However, this approach often yields poor results due to the lack of characterization of fault features. To address this, a new fault location method for tripping faults in Extra High Voltage (EHV) substations is proposed. This method utilizes a binary tree algorithm to construct a fault binary tree and encode the nodes to accurately characterize the fault characteristics. Using this information, a fault location model is developed. Experimental verification confirms the effectiveness of the proposed method, with analysis showing its ability to successfully locate tripping faults in EHV substations with high convergence and superior accuracy.

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An ultra-high power density supercapacitor: Cu(II) phthalocyanine tetrasulfonic acid tetrasodium salt doped polyaniline

Cited by 18 publications

References 93 publications

S-Doped Graphene Oxide/N-Doped Graphene Oxide/PANI: A Triple Composite for High-Performance Supercapacitor Applications

S-Doped Graphene Oxide/N-Doped Graphene Oxide/PANI: A Triple Composite for High-Performance Supercapacitor Applications

Synthesis, fabrication and characterization of 2-naphthyloxy group-substituted bis(2-pyridylimino)isoindoline and its derivatives as a positive electrode for vanadium redox flow battery applications

Binary Tree Algorithm-based Fault Location Method for Tripping in Ultra-high Voltage Substations

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