An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

“…This is also very instructive regarding the forming step issue in OTS devices. It is usually observed in selector devices that, after the first OTS cycle, the electronic properties of the OTS evolve with, for instance, a decrease in V th , requiring a so-called forming or firing step before OTS device operation (23,24). The atomistic view of OTS given here by simulation shows that such an effect could be reasonably attributed to the result of a structural relaxation of the glass induced by the electronic excitation.…”

Dependence of Switching Probability on Operation Conditions in GexSe1–xOvonic Threshold Switching Selectors

“…The statistical analysis of the OTS switching voltage and switching time and their correlation is therefore critically important for choosing suitable operation conditions for the 1S1R structure. Despite recent efforts in tuning the material composition and process to improve the performance [10][11][12][13][14][15], an experimental characterization method is still lacking for quantitatively evaluating the switching probability and its dependence on the operation conditions, which is the essential information required for designing the 1S1R array.…”

Transient Tap Couplers for Wafer-Level Photonic Testing Based on Optical Phase Change Materials

“…To expedite adoption of the technology, one critical barrier that must be overcome is the integration of O-PCMs into the foundry process flow of PICs. Chalcogenide alloys are certainly no strangers to state-of-the-art memory foundries, which routinely employ these materials both as the information storage media and memory cell selectors . As a first step toward integration of O-PCMs into standard photonic manufacturing processes, we have realized in-foundry process integration of GSST with Lincoln Laboratory’s 200 mm Si and SiN integrated photonics line.…”

“…Chalcogenide alloys are certainly no strangers to state-of-the-art memory foundries, which routinely employ these materials both as the information storage media and memory cell selectors. 40 As a first step toward integration of O-PCMs into standard photonic manufacturing processes, we have realized in-foundry process integration of GSST with Lincoln Laboratory's 200 mm Si and SiN integrated photonics line. Seamless integration of O-PCMs with integrated photonics will qualify the transient coupler as a promising platform for wafer-level testing.…”