2021 IEEE Energy Conversion Congress and Exposition (ECCE) 2021
DOI: 10.1109/ecce47101.2021.9595029
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An Ultra-Fast Short Circuit Protection for Three-Phase GaN Electric Drives

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Cited by 5 publications
(6 citation statements)
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“…Three-phase currents are measured by three IT-60s Ultrastab current sensors. A three-phase GaN inverter is designed based on the design criteria of [24] by using GS66508T GaN HEMT switches. A dSpace MicrolabBox is used to control the machine, in which the PWM and deadtime generation, current measurement sampling, and resolver sampling are coded in the FPGA domain.…”
Section: Resultsmentioning
confidence: 99%
“…Three-phase currents are measured by three IT-60s Ultrastab current sensors. A three-phase GaN inverter is designed based on the design criteria of [24] by using GS66508T GaN HEMT switches. A dSpace MicrolabBox is used to control the machine, in which the PWM and deadtime generation, current measurement sampling, and resolver sampling are coded in the FPGA domain.…”
Section: Resultsmentioning
confidence: 99%
“…The application of the SVC method to a multi-phase inverter was proposed in [8] for a 48 V 3-phase GaN electric drive. Compared to SiC, GaN MOSFETS have faster switching characteristics (higher di/dt) and lower power losses, This article has been accepted for publication in IEEE Open Journal of Power Electronics.…”
Section: B Applying Svc To a 6-phase Invertermentioning
confidence: 99%
“…This is the author's version which has not been fully edited and content may change prior to final publication. Citation information: DOI 10.1109/OJPEL.2024.3352117 OJ-PEL-2023-0229.R1 however, they have a smaller SC withstand time and suffer from higher ringing during turn-Off [8]. With higher di/dt, the SVC detection time is automatically faster.…”
Section: B Applying Svc To a 6-phase Invertermentioning
confidence: 99%
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