“…Due to the applicability of the stacked-FET [1,2,3] structure to the design of broadband RF PAs, a variety of scholars have developed broadband PAs with several typologies based on different processes such as CMOS [4,5,6], GaAs [7,8,9], and GaN [10,11,12]. Among them, GaAs is one of the most suitable mature processes for developing mid-power, high-linearity, and high-efficiency broadband PA. For typologies, the distributed amplifier has a superior bandwidth performance, while it is oversize and inefficient [11,12,13,14,15,16].…”