An injection‐locked green InGaN diode laser

Abstract

We designed a single-frequency green laser system that can deliver a 60-mW frequency-tunable single-longitudinal-mode laser beam, having a 6.5 MHz linewidth at around 519 nm. An external cavity diode laser can provide a wavelength-tunable single frequency laser beam, but its output power is limited. Therefore, an injection-locked laser was designed with a Fabry-Perot type green InGaN laser diode in an external Littrow-type cavity as the master laser and another laser diode of the same model as the slave laser. Injection locking can effectively enhance the output power and narrow the linewidth of the master laser. We found that the injection locking occurred at longitudinal mode matching between the master laser and slave laser diodes, which is located at a specific frequency for a periodical applied current. The side peaks of the injection locking due to the transverse mode mismatching were recorded and analyzed.

Narrow Linewidth 510 nm Laser via Single-Pass Frequency-Tripling by Waveguide PPLNs

“…Lu et al also reported a kind of self-frequency-doubling (SFD) crystal combing the processes of fundamental production and second harmonic generation, with prospects of high-power applications [10]. [9] SHG + SFG 514 nm (~) 290 mW 36% Lu et al [10] SFD 513 nm (~) 6.2 W 30% Chi et al [6] ECDL 515 nm (9.2 nm) 480 mW ~~0.5 nm Mateus et al [7] micro-ring 520 nm (6.0 nm) 10.75 mW ~26 kHz Chen et al [11] injection-lock 519 nm (~) 60 mW ~6.5 MHz Tawfieq et al [ In this paper, we present a 200 mW narrow linewidth laser at 510 nm for the study of Cs Rydberg atoms. To achieve this, we have established an ultra-narrow linewidth laser operating in the telecom band (1530 nm) as the seed source.…”