An overview of X-ray lithography

Ohki, Shigehisa; Ishihara, Shuji

doi:10.1016/0167-9317(95)00220-0

Cited by 8 publications

(2 citation statements)

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“…During the 1980s and 1990s, X-ray lithography garnered significant attention as a promising lithographic technique, particularly in the context of next-generation lithography [ 61 , 68 ]. However, the utilization of photoresists that incorporate POSS in conjunction with X-ray exposure has received relatively limited research attention.…”

Section: Classification Of the Poss-base Photoresistmentioning

confidence: 99%

“…A schematic representation of the UV-NIL process is illustrated in Figure 9 [69], where the impression pattern is replicated within the resist and subsequently transferred onto the substrate through plasma etching. UV- During the 1980s and 1990s, X-ray lithography garnered significant attention as a promising lithographic technique, particularly in the context of next-generation lithography [61,68]. However, the utilization of photoresists that incorporate POSS in conjunction with X-ray exposure has received relatively limited research attention.…”

Section: The Uv-nil Poss-based Photoresistmentioning

confidence: 99%

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Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems

Wen,

Liu,

Chen

et al. 2024

Polymers

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This paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specific emphasis on critical parameters such as film formation, sensitivity, resolution, solubility, and edge roughness. These lithographic systems encompass X-ray lithography (XRL), deep ultraviolet nanoimprint lithography (DUV-NIL), extreme ultraviolet lithography (EUV), and guided self-assembled lithography (DSA). The principal objective of this paper is to furnish valuable insights into the development and utilization of POSS-based photoresist materials in diverse lithographic contexts.

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Section: Classification Of the Poss-base Photoresistmentioning

confidence: 99%

Section: The Uv-nil Poss-based Photoresistmentioning

confidence: 99%