An overview of the deposition chemistry and the properties of in situ doped polysilicon prepared by low pressure chemical vapour deposition

Chemical Modification of Silicon (100) Surface via UV-Induced Graft Polymerization

“…The deposition of thin films onto various silicon surfaces has attracted considerable attention due to its importance to the development of advanced materials for applications ranging from microelectronics to solar cells . During the past 2 decades, chemical vapor deposition (CVD) has quickly become one of the most important techniques for synthesizing insulators, conductors, diamond thin films, and high-temperature superconductors on semiconductor surfaces. − More recently, even C-60 film has been successfully coated onto a silicon surface using this method . However, CVD methods can only be used for depositing inorganic and molecular organic films on silicon surfaces.…”

Structures, Energetics, and Transition States of the Silicon−Phosphorus Compounds Si2PHn (n = 7, 5, 3, 1). An ab Initio Molecular Orbital Study

“…This effect is much less severe when disilane is used as the silicon source. It has been suggested by Ahmed et al 14 that this is due to the stronger adsorption of disilane to the surface. An alternative explanation is that silylene, produced along with silane in the decomposition of disilane, can adsorb to the surface with a sticking probability competitive with that of phosphine.…”

“…It has been suggested by Ahmed et al that this is due to the stronger adsorption of disilane to the surface. An alternative explanation is that silylene, produced along with silane in the decomposition of disilane, can adsorb to the surface with a sticking probability competitive with that of phosphine. , In the gas phase, silylene can easily insert into a phosphine PH bond, with a computed barrier height of less than 2 kcal/mol. , The product of this reaction, silylphosphine, has been observed experimentally in the pyrolysis of a phosphine/disilane mixture . Thus the present theoretical study on Si−P bonding and reactivity could also contribute to our understanding of the gas-phase reactions in the CVD of phosphorus-doped silicon.…”

“…Phosphorus-doped silicon is one of the principal n-type materials used for MOS gates in semiconductors. It can be formed by diffusion of dopants into the solid or by in situ doping using chemical vapor deposition (CVD) with a mixture of silane and phosphine . However, some difficulties arise because phosphine tends to passivate the surface even at low concentrations, resulting in a reduction of the deposition rate.…”

“…It can be formed by diffusion of dopants into the solid or by in situ doping using chemical vapor deposition (CVD) with a mixture of silane and phosphine. 14 However, some difficulties arise because phosphine tends to passivate the surface even at low concentrations, 15 resulting in a reduction of the deposition rate. This effect is much less severe when disilane is used as the silicon source.…”