An outline of the synthesis and properties of silicon nanowires

Abstract

We consider some of the significant aspects of Silicon nanowires (NWs), referring to their various modes of fabrication and their measured properties. Lithographic patterning as well as individual NW synthesis, e.g., through chemical vapor deposition based processes, has been utilized for their fabrication. It is seen that the properties of these nanostructures, to a large extent, are determined by the enhanced surface area to volume ratio and defects play a relatively major role. A diminished size also brings forth the possibility of quantum confinement effects dictating their electronic and optical properties, e.g., where NWs can possess a direct energy gap in contrast to the indirect bandgap of bulk Si. While new challenges, such as enhanced Ohmic contact resistance, carrier depletion-which can severely influence electrical conduction, and surface passivation abound, there also seem to be exciting opportunities. These include, e.g., high sensitivity sensors, nanoelectromechanical systems, and reduced thermal conductivity materials for thermoelectrics. Much preliminary work has been done in these areas as well as investigating the possible use of Si NWs for transistor applications, photovoltaics, and electrochemical batteries etc., all of which are briefly reviewed.

Structural, electronic and magnetic properties of 3d transition metal atom adsorbed germanene: A first-principles study

“…Though significant research interests in graphene grow rapidly, the growth of graphene over large areas and its integration in current Si-based nanotechnologies still face important challenges. Ge is an important semiconductor material having well compatibility with Si in conventional semiconductor industry and also higher carrier mobility which offers potential advantages for performance gains in high-speed electronic devices [6]. If the 2D graphene-like Ge, so called germanene, could be grown, its integration into Si-based nanoelectronics would be most likely much favored over graphene.…”

Ge–Si and Si–Ge core–shell nanocrystals: Theoretical study

“…Recently semiconductor core-shell nanostructures have attracted considerable interest for applications in nanoelectronic and optoelectronic devices [18][19][20]. Core-shell NCs are formed by the growth of crystalline over layers as a shell on the different nanocrystalline material as a core.…”

Silicon nanowires grown on metal substrates via self-catalyst mechanism

“…Some SiNWs applications such as solar cells, sensors, transistors, photodetectors have been reported [1][2][3][4][5].…”

“…Several techniques are applied to prepare SiNWs: lithographic methods, laser ablation, various CVD techniques, solution phase synthesis, chemical etching, molecular beam epitaxy, oxide assisted growth method [1][2][3][4][5][6]. Many of them incorporate VLS/VSS (Vapor-Liquid-Solid, Vapor-Solid-Solid) approaches in which nanoscale metal particles serve as initialization/growth agents.…”