“…According to the integer charge transfer model, the composite SnO 2 /Hf(ACBN) 4 film is energetically more suitable to form a favorable energy‐level alignment with the acceptors, which can decrease the energy barrier and contribute to the charge collection process at the cathode electrode to obtain higher V oc values in OSCs. [
41–43 ] The electrical conductivities of SnO 2 , Hf(ACBN) 4 , and SnO 2 /Hf(ACBN) 4 were evaluated by the dark I – V characteristics of the devices with a structure of ITO/ ETLs/Ag, in which highly conductive ITO and Ag were used as electrodes to ensure good ohmic contact (Figure S6, Supporting Information). The electrical conductivity (σ) of the materials can be obtained according to the equation as follow:
G 0 (S) is the conductance acquired by the I–V curve slope, d 0 is the film thickness of ETLs, and A is the device area.…”