An Optimized Temperature Sensor Calorimetric Power Device Loss Measurement Method

Abstract

In the optimized design of power converters, loss analysis of power devices is important. Compared with estimation methods, measuring the power device loss directly in the circuit under test is more accurate. The loss measurement method can be divided into two categories: electrical measurement and calorimetric measurement. The accuracy of the electrical measurement result is restricted to the accuracy of the measurement equipment and parasitic parameters, especially for fast switching devices like SiC devices. The results obtained from calorimetric measurement are more convincing. Based on the measurement principle, calorimetric measurement can be divided into four categories: flow density measurement, temperature equivalent measurement, double jacket measurement, and temperature sensor measurement. This paper proposes an optimized temperature sensor measurement method, which has shorter time consumption, a simpler setup, and lower cost. The principles of the optimized method are described and compared with the traditional ways in detail to show its advantages. The loss measurement and error analysis are carried out in a three-level ANPC (active neutral-point-clamped) topology experiment platform based on the SiC&Si hybrid module to prove the accuracy and practicability of this method.

Single Three-Phase Inverter for Dual-Frequency Induction Heating

“…Moreover, it is even more important that each cooling system is not affected by another. Due to the modular structure, the power losses of each half-bridge were estimated using the steady-state temperature measurement method [28]. This method consists in preliminary scaling of the given losses in the transistor as a function of the measured temperature for the steady state.…”

Calorimetric measurement methodology for comprehensive soft and hard switching loss characterisation

“…These methods sense the thermal domain, which means the DUT must be thermally decoupled from other semiconductors. Separation of E on and E off is often impossible in these setups [4], which means the results cannot be generalised. Sometimes changes need to be made to the commutation loop to facilitate the method [5].…”