An Optically, Electrically, Magnetically Controllable Dual‐Gate Phototransistor

Abstract

Higher data transmission rates, broader bandwidths, better privacy, and security are indispensable for the current information‐explosive age. However, to achieve the desired functionalities still remains as a great challenge. In this study, a two‐terminal, vertical dual‐gate phototransistor, which can be controlled by light, electric and magnetic fields, is proposed, fabricated, and demonstrated. This phototransistor uses a tandem structure composed of an organic solar cell (OSC) of ITO/ZnO/P3HT:PC61BM/MoO3/Ag, a resistive random access memory (RRAM) of Ag/PMMA/Au and a magnetoelectric film with micropyramid structure of PDMS:FeNi/silver nanowires (AgNWs). This device integrates and couples the properties of each individual component enabling to respond to light, electric and magnetic fields and works as a dual‐gate transistor. Compared with conventional transistors, the proposed device carries several intriguing features, such as ultrafast photoresponse time of 3 µs, controllable photocurrent with a variety of external stimuli, high ON/OFF ratio greater than 103, and touchless human–machine interaction. All of the above features are beneficial for high‐speed optical communication and circuit miniaturization. Furthermore, its unique logical characteristics show great potential for information security in the future development of Li‐Fi optical communication.

A high-performance magnetoelectric non-volatile light-emitting memory device

“…54–56 Thus, the magnetoelectric LEM studied in our current work has not been tested for AC-voltage operation, which represents an outstanding direction for the future study. In addition, the response time of Ag/PMMA/Au RRAM is 3 μs and that of the micro-pyramid magnetoelectric device is about 15 ms. 24,57,58 Therefore, for the voltage control switch, our proposed device can be operated at the microsecond level; for the magnetic field control switch, it can be operated at the millisecond level.…”

“…Some of the polymers can provide electrical continuity when deformed due to their compliant physical properties. 24,25 Thanks to their deformability, elasticity, and flexibility, flexible electronics can be applied in the field of mechanical strain sensors. One of the promising applications is the integration of mechanical strain sensors with data-storage devices, e.g.…”

“…A magnetic field sensor can be achieved by detecting different mechanical strains under various magnetic field strengths. 12 The magnetic field sensor can also be integrated with other semiconductor devices, such as RRAMs 27 and phototransistors 24 to control the output signals. All in all, there are lots of promising applications in flexible electronic devices owing to their diverse properties.…”

A flexible floating-gate based organic field-effect transistor non-volatile memory based on F8BT/PMMA integrated floating-gate/tunneling layer

“…Where R is the radius of curvature or bending radius, h is the thickness of the device, which is usually mainly determined by the substrate thickness (100 μm for the PEN substrate).With the growing bending times, cracks on the surface of the memory device also increase, as illustrated in figure 5(e) [51]. Although the memory properties of the device are influenced by strains of thin films in the mechanical bending process, the device still shows excellent stability under mechanical bending [52,53]. This is because the integrated floating-gate/ tunneling layer comprising the semiconductor polymer F8BT and the insulating polymer PMMA in the memory device was prepared through spin coating and annealing.…”