An optical study of Ni induced crystallization of a-Si thin films

Kumar, Koppolu Uma Mahendra; Brahma, R.; Krishna, M Ghanashyam; Bhatnagar, Anil K.; Dalba, G.

doi:10.1088/0953-8984/19/49/496208

Cited by 13 publications

(8 citation statements)

References 23 publications

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“…On annealing to 300°C, the refractive index decreases to 2.03 (at 1750 nm), which further decreases to 1.93 at 400 and 1.88 at 500°C. The high refractive index of the as-deposited sample is entirely due to the a-Si layer, as reported earlier [7]. As observed from the x-ray diffraction patterns, presented earlier, there is simultaneous crystallization of a-Si and oxidation of Sn when the sample is annealed at 300°C.…”

Section: Resultssupporting

confidence: 79%

“…However, literature on nanocomposite thin films consisting of metal and elemental semiconductors is very limited [1][2][3][4]. One of the approaches to form metal-nanocrystalline silicon nanocomposite films is the process of metal-induced crystallization (MIC) [5][6][7][8][9][10][11][12]. The normal crystallization temperature of silicon is 973 K or higher.…”

Section: Introductionmentioning

confidence: 99%

“…Silicon produced by the MIC process has also been shown to crystallize in the wurtzite structure [5][6][7][8]. The nanocomposite films have refractive index in the range of 2.6-4.0 in the visible region of the spectrum accompanied by an optical band gap between 1.2 and 1.6 eV.…”

Section: Introductionmentioning

confidence: 99%

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Growth and optical properties of Sn–Si nanocomposite thin films

Mohiddon

Krishna

2012

J Mater Sci

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The growth and optical properties of nanocomposite thin films comprising of nanocrystalline Sn and Si are reported. The nanocomposite films are produced by thermal annealing of bilayers of Sn and Si deposited on borosilicate glass substrates at various temperatures from 300 to 500°C for 1 h in air. X-ray diffraction reveals that the as-deposited bilayers consist of nanocrystalline Sn films with a crystallite size of 30 nm, while the Si thin films are amorphous. There is onset of crystallinity in Si on annealing to 300°C with the appearance of the (111) peak of the diamond cubic structure. The crystallite size of Si increases from 5 to 18 nm, whereas the Sn crystallite size decreases with increase in annealing temperature. Significantly, there is no evidence for any Sn-Si compound, and therefore it is concluded that the films are nanocomposites of Sn and Si. Measured spectral transmittance curves show that the films have high optical absorption in the as-deposited form which decreases on annealing to 300°C. The films show almost 80 % transmission in the visible-near infrared region when the annealing temperature is increased to 500°C. There is concomitant decrease in refractive index from 4.0, at 1750 nm, for the as-deposited film, to 1.88 for the film annealed at 500°C. The optical band gap of the films increases on annealing (from 1.8 to *2.9 eV at 500°C). The Sn-Si nanocomposites have high refractive index, large band gap, and low optical absorption, and can therefore be used in many optical applications.

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Section: Resultssupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

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Growth and optical properties of Sn–Si nanocomposite thin films

Mohiddon

Krishna

2012

J Mater Sci

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“…Later, people successively discovered that other metals can also promote the crystallization of silicon. Mohiddon and Krishna’s groups at the University of Hyderabad have conducted extensive research on metal layer-induced amorphous silicon crystallization (chromium [ 77 ], nickel [ 78 , 79 ]) for the past few years. They studied the thermal behavior such as diffusion and reaction under different annealing temperatures, and then put forward the crystallization mechanism of a -Si: (1) interdiffusion between metal and silicon; (2) reaction of metal and silicon to form silicide; (3) silicon nanocrystalline grows on the silicide seeds.…”

Section: Pathways To Exotic Metastable Silicon Allotropesmentioning

confidence: 99%

A Review on Metastable Silicon Allotropes

Fan

Yang

2021

Materials

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Diamond cubic silicon is widely used for electronic applications, integrated circuits, and photovoltaics, due to its high abundance, nontoxicity, and outstanding physicochemical properties. However, it is a semiconductor with an indirect band gap, depriving its further development. Fortunately, other polymorphs of silicon have been discovered successfully, and new functional allotropes are continuing to emerge, some of which are even stable in ambient conditions and could form the basis for the next revolution in electronics, stored energy, and optoelectronics. Such structures can lead to some excellent features, including a wide range of direct or quasi-direct band gaps allowed efficient for photoelectric conversion (examples include Si-III and Si-IV), as well as a smaller volume expansion as lithium-battery anode material (such as Si24, Si46, and Si136). This review aims to give a detailed overview of these exciting new properties and routes for the synthesis of novel Si allotropes. Lastly, the key problems and the developmental trends are put forward at the end of this article.

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“…In recent years, rapidly growing attention has been paid to nanocrystalline films consisting of crystalline grains with sizes lower than 100 nm and showing outstanding physical and mechanical properties; see, e.g., [11][12][13][14][15]. Such films can be divided into nanocrystalline thin films and thicker ones, often called nanocrystalline coatings.…”

Section: Introductionmentioning

confidence: 99%

Stress relaxation through interfacial sliding in nanocrystalline films

Скиба¹,

Ovid’ko²,

Sheĭnerman³

2008

J. Phys.: Condens. Matter

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A special mechanism of stress relaxation in nanocrystalline films is suggested and theoretically described. The mechanism represents the interfacial sliding accompanied by the formation of wedge disclination dipoles at grain boundaries in nanocrystalline films. The wedge disclination dipoles release, in part, mismatch stresses generated at film-substrate boundaries. It is theoretically shown that the special relaxation mechanism is energetically favorable in various nanocrystalline films deposited onto single crystalline substrates (in particular, AlN/6H-SiC, GaN/6H-SiC, 3C-SiC/Si and Ni/Cu film/substrate systems) in wide ranges of their parameters.

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An optical study of Ni induced crystallization of a-Si thin films

Cited by 13 publications

References 23 publications

Growth and optical properties of Sn–Si nanocomposite thin films

Growth and optical properties of Sn–Si nanocomposite thin films

A Review on Metastable Silicon Allotropes

Stress relaxation through interfacial sliding in nanocrystalline films

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