An On-Chip Ultra-Wideband Bandpass Filter in 0.18-<i>μ</i>m SiGe BiCMOS Technology

Xu, Jin; Liu, Fang; Ji, Song‐Yao; Duan, Yu-Wen; Zhang, Hao

doi:10.1109/led.2022.3176051

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…For instance, through the analysis of the LC equivalent circuit, an on‐chip BPF based on the shunt dual‐layer meander‐line resonators and multiple metal‐insulator‐metal (MIM) capacitors is designed in [8]. Moreover, in [12], an on‐chip ultra‐wideband (UWB) BPF in 0.18‐µm SiGe BiCMOS process is presented by using cascaded highpass filter (HPF) and lowpass filter (LPF), which provides sharp passband selectivity and deep out‐of‐band rejection.…”

Section: Introductionmentioning

confidence: 99%

“…Introduction: In the design of integrated circuits (ICs) for front-end systems, passive devices such as bandpass filters (BPFs) [1][2][3][4][5][6][7][8][9][10][11][12], power dividers [13][14][15] and couplers [16][17][18] usually occupy relatively large layout space. In order to reduce the yield cost of ICs, miniaturized design of passive devices is attracting increasing attention.…”

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confidence: 99%

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A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Xu,

Xi,

Liu

et al. 2024

Electronics Letters

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A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. To demonstrate the working mechanism of the proposed BPF, an inductor‐capacitor (LC) equivalent circuit model is conceived and analysed for further investigation of the transmission poles (TPs) and zeros. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Xu,

Xi,

Liu

et al. 2024

Electronics Letters

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An On-Chip Filter Using Near-End Cross-Coupling With Jigsaw Puzzle Shaped Resonators

Cao,

2023

IEEE J. Electron Devices Soc.

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In this paper, an on-chip band-pass filter with nearend cross-coupling (NECC) scheme is proposed based on the 0.13μm SiGe (Bi) CMOS processing technology. First, in order to increase the out-of-band suppression, the NECC is proposed to produce an extra transmission zero (TZ) without introducing extra resonators, thus increasing the out-of-band suppression. Then, in order to facilitate the design process, the jigsaw puzzle shaped resonator structure is proposed. This resonator consists of several teeth structure along the outer edge of the resonators. The proposed structure not only enhances the coupling coefficient at the same coupling width, but also the coupling coefficient can be flexibly tuned by modifying the outer teeth structure without changing the relative positions of the resonators. The proposed filter is theoretically analyzed, full-wave simulated, manufactured and measured. The measured results are generally in good agreement with the simulated results. The proposed filter can be applied in the unlicensed millimeter wave region of the 5G wireless communication systems.

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A Low-Loss Bandpass Filter With Stacked Double-Layer Structure Using Glass-Based Integrated Passive Device Technology

2023

IEEE Electron Device Lett.

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An On-Chip Ultra-Wideband Bandpass Filter in 0.18-μm SiGe BiCMOS Technology

Cited by 5 publications

References 15 publications

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

An On-Chip Filter Using Near-End Cross-Coupling With Jigsaw Puzzle Shaped Resonators

A Low-Loss Bandpass Filter With Stacked Double-Layer Structure Using Glass-Based Integrated Passive Device Technology

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