An on-chip III-V-semiconductor-on-silicon laser frequency comb for gas-phase molecular spectroscopy in real-time

Gasse, Kasper Van; Chen, Zaijun; Vicentini, Edoardo; Huh, Jeonghyun; Poelman, Stijn; Wang, Zhechao; Roelkens, Günther; Hänsch, Theodor W.; Kuyken, Bart; Picqué, N.

doi:10.48550/arxiv.2006.15113

Cited by 9 publications

(16 citation statements)

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“…5b that the RF modulation allows again to generate a perfect TL pulse with a linear phase evolution. Although hybrid mode-locking has been extensively demonstrated and studied, the details of operation are complex and not fully understood [8,9]. With the presented results, we show that the SH technique allows to investigate, in detail, the possibility of pulse shaping using the RF modulation of the SA.…”

Section: Introductionmentioning

confidence: 80%

“…We have measured perfect pulses with linear phase chirp when applying a sinusoidal modulation on top of the SA bias voltage that is resonant with the 8 GHz FSR of the laser cavity. Our analysis paves the way for further exploration, modeling and potential manipulation of the phase dynamics in semiconductor mode-locked lasers, with particular focus on the hybrid III-V-on-Si technologies where very long cavities can be fabricated [8,9]. These promising results can serve as a starting point for future investigations and would allow to identify new ways of controlling the pulse shape in semiconductor mode-locked lasers.…”

Section: Introductionmentioning

confidence: 86%

“…The low-loss Si waveguide enables the propagation of light in the cavity over several cms; OFC lasing in PML hybrid lasers has recently been demonstrated with 1 GHz FSR, providing a ultra-dense comb spectrum containing more than 1400 lines [8]. The hybrid III-V-on-Si laser technology has proved mature enough for spectroscpic applications [9] and better understanding of the noise performance and pulse quality of these lasers is required. In PML semiconductor lasers, the overall performances are strongly affected by the SA properties, hence the ability to measure the influence of the SA during lasing is essential to control the laser operation.…”

Section: Introductionmentioning

confidence: 99%

“…However, the design of the ring lasers allows to apply a RF electrical modulation to the SA section and therefore operate the laser in the so-called hybrid mode-locking regime. Such modulation has for example been used in [9] in order to lock the repetition frequency of the laser to an external clock, and therefore avoid the effect of environnemental noise on pulse jittering. We show in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…In all cases, V SA consists in a 100 mV p-p sinusoidal signal added to a DC offset. The RF frequency is chosen such that it stands in the locking cone where the laser FSR will follow the electrical clock (see [9] for details). In Fig.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of the phase-locking dynamics of a III-V-on-silicon frequency comb laser

Verschelde¹,

Gasse²,

Kuyken³

et al. 2020

Preprint

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We present the detailed characterization of the phase dynamics of a telecom hybrid III-V-onsilicon passively mode-locked laser with a ring cavity. We explore the various regimes of operation as a function of gain current and saturable absorber bias voltage. We use a stepped-heterodyne measurement to quantify the spectral chirp and reconstruct the pulse envelop. With this technique we are able to identify regimes of near-transform-limited operation and we assess the degradation of mode-locking in the comb phase relationship when saturable absorber bias voltage is changed. Finally, we present a preliminary study of the phase-locking in hybrid mode-locked operation and demonstrate transform-limited pulses.FIG. 1: Layout of the hybrid 8 GHz ring frequency comb laser. Semiconductor Optical Amplifier (SOA) and Saturable Absorber (SA) are integrated within the active Indium Phosphide (InP) material. The long spiral waveguide is etched in the underlying Si membrane that is bonded to InP. Light is evanescently coupled between active and passive layers.

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Section: Introductionmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Analysis of the phase-locking dynamics of a III-V-on-silicon frequency comb laser

Verschelde¹,

Gasse²,

Kuyken³

et al. 2020

Preprint

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Dual-comb spectroscopy of ammonia formation in non-thermal plasmas

Sadiek,

Fleisher,

Hayden

et al. 2024

Commun Chem

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Plasma-activated chemical transformations promise the efficient synthesis of salient chemical products. However, the reaction pathways that lead to desirable products are often unknown, and key quantum-state-resolved information regarding the involved molecular species is lacking. Here we use quantum cascade laser dual-comb spectroscopy (QCL-DCS) to probe plasma-activated NH3 generation with rotational and vibrational state resolution, quantifying state-specific number densities via broadband spectral analysis. The measurements reveal unique translational, rotational and vibrational temperatures for NH3 products, indicative of a highly reactive, non-thermal environment. Ultimately, we postulate on the energy transfer mechanisms that explain trends in temperatures and number densities observed for NH3 generated in low-pressure nitrogen-hydrogen (N2–H2) plasmas.

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Thin-film lithium-niobate electro-optic platform for spectrally tailored dual-comb spectroscopy

Shams-Ansari

Chen

et al. 2022

Commun Phys

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Laser frequency comb generators on photonic chips open up the exciting prospect of integrated dual-comb microspectrometers. Amongst all nanophotonic platforms, the technology of low-loss thin-film lithium-niobate-on-insulator shows distinguishing features, such as the possibility to combine various optoelectronic and nonlinear optical functionalities that harness second- and third-order nonlinearities, and thus promises the fabrication of a fully on-chip instrument. Here, a critical step towards such achievement is demonstrated with an electro-optic microring-based dual-comb interferometer. Spectra centered at 191.5 THz and spanning 1.6 THz (53 cm−1) at a resolution of 10 GHz (0.33 cm−1) are obtained in a single measurement without requiring frequency scanning or moving parts. The frequency agility of the system enables spectrally-tailored multiplexed sensing, which allows for interrogation of non-adjacent spectral regions, here separated by 6.6 THz (220 cm−1), without compromising the signal-to-noise ratio. Our studies show that electro-optic-based nanophotonic technology holds much promise for new strategies of molecular sensing over broad spectral bandwidths.

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An on-chip III-V-semiconductor-on-silicon laser frequency comb for gas-phase molecular spectroscopy in real-time

Cited by 9 publications

References 0 publications

Analysis of the phase-locking dynamics of a III-V-on-silicon frequency comb laser

Analysis of the phase-locking dynamics of a III-V-on-silicon frequency comb laser

Dual-comb spectroscopy of ammonia formation in non-thermal plasmas

Thin-film lithium-niobate electro-optic platform for spectrally tailored dual-comb spectroscopy

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