An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au structure

Chang, Liann‐Be; Das, Anjana; Lin, Ray-Ming; Maikap, S.; Jeng, Ming–Jer; Chou, S. G.

doi:10.1063/1.3596382

Cited by 13 publications

(6 citation statements)

References 28 publications

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“…The RTA treatment of amorphous Gd 2 O 3 film is an effective and simple method to form Gd 2 O 3 -NCs, which are used as Si-based and heterostructure GaN/AlGaN-based charge trapping devices [19,20]. It has been demonstrated that the capacitance-voltage sweep measurement yields a large memory window of the Gd 2 O 3 -NC memories.…”

Section: Introductionmentioning

confidence: 99%

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

Wang

Lin

Huang

et al. 2012

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

Wang

Lin

Huang

et al. 2012

Microelectronics Reliability

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“…18 The tunneling induced electron transfer effect in GaN/AlGaN/Gd 2 O 3 (crystalline)/Ni-Au structure opens up a way to design GaN/AlGaN based memory device and have already been studied previously. 19 During positive gate voltage stress at RT and 100…”

Section: Resultsmentioning

confidence: 99%

Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

2012

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Temperature dependent threshold voltage (Vth) variation of GaN/AlGaN/Gd2O3/Ni-Au structure is investigated by capacitance-voltage measurement with temperature varying from 25°C to 150°C. The Vth of the Schottky device without oxide layer is slightly changed with respect to temperature. However, variation of Vth is observed for both as-deposited and annealed device owing to electron capture by the interface traps or bulk traps. The Vth shifts of 0.4V and 3.2V are obtained for as-deposited and annealed device respectively. For annealed device, electron capture process is not only restricted in the interface region but also extended into the crystalline Gd2O3 layer through Frenkel-Poole emission and hooping conduction, resulting in a larger Vth shift. The calculated trap density for as-deposited and annealed device is 3.28×1011∼1.12×1011 eV−1cm−2 and 1.74×1012∼7.33×1011 eV−1cm−2 respectively in measured temperature range. These results indicate that elevated temperature measurement is necessary to characterize GaN/AlGaN heterostructure based devices with oxide as gate dielectric.

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“…This resulted in metal-oxidesemiconductor (MOS) devices with a small breakdown field. In a recent study, a charge trapping phenomena was observed in GaN/AlGaN/Gd 2 O 3 /Ni-Au MOS heterostructures due to crystallization of the Gd 2 O 3 film [7]. The charge trapping phenomenon resulted in a significant memory window with only a time dependent charge loss.…”

Section: Introductionmentioning

confidence: 97%

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

2015

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One µm thick Gd 2 O 3 films were grown on GaN/AlGaN heterostructures by reactive electron beam physical vapor deposition. The films were of cubic bixbyite phase with strong (222) out-of-plane and in-plane texture. The films showed a columnar microstructure with feather-like growth. Transmission electron microscopy analysis and selected area diffraction showed highly oriented single crystal like growth near the film interface which degraded as the film thickness increased. Capacitance-voltage (C-V) characteristics show that the Gd 2 O 3 device results in a negative threshold shift of approximately 1.9 V. Hysteresis of 0.9 V was extracted from the C-V curve corresponding to a trapped charge density of 6.9 x 10 10 cm-2. The conduction mechanisms were found to be dominated by Poole Frenkel conduction between 50-100 °C and Schottky emission between 125-200 °C. The trap height for Poole-Frenkel conduction was 0.46 eV and the Schottky barrier height was 0.79 eV.

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An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au structure

Cited by 13 publications

References 28 publications

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

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