An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGe HBTs

Khanduri, Gagan; Panwar, B.S.

doi:10.1016/j.sse.2007.03.014

Cited by 2 publications

(1 citation statement)

References 22 publications

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“…Where pE D and nB D are the diffusion coefficient of emitter region and base region, g E is the band gap of emitter -base junction. The base transit time can be expressed as following [4]:…”

Section: Current Gain Modelmentioning

confidence: 99%

Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance

Liu

2011

AMR

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SiGe heterojunction structure much improves the performance of PnP HBT (heterojunction bipolar transistor), which focus on the impact of Ge component distribution in the base on the current gain and characteristic frequency . The triangular distribution in the base, including zero-doping and non-zero-doping at the starting point, will form a Ge-gradient acceleration filed for the minority carriers in the base to reduce the base transport time and increase current density and working frequency. Extend Ge to the collector region to eliminate the effect of the valence band spike barrier at the collector junction, further improving the performance of the pnp HBT. By the simulations and optimizations in this paper, the and of pnp SiGe HBT improves evidently, and the results can be referenced in the design of SiGe devices and circuits.

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Section: Current Gain Modelmentioning

confidence: 99%

Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance

Liu

2011

AMR

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A novel approach for justification of box-triangular germanium profile in SiGe HBTs

Khanduri¹,

Panwar²

2015

J. Semicond.

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This work presents a unique and robust approach for validation of using the box-triangular germanium profile in the base of SiGe heterojunction bipolar transistors, where the methodology considers the simultaneous optimization of the p-type base doping profile in conjunction with the germanium profile in the base. The study analyses the electron motion across the SiGe base in SiGe HBTs, owing to different accelerating electric fields. The analysis first presents a figure of merit, to achieve the minimum electron transit time across the base in conjunction with the increased current gain in n-p-n-SiGe HBTs, which shows a general trend vis-à-vis the advantage of a trapezoid germanium profile, but with additional accuracy as we considered simultaneously optimized p-type base doping. The effect of minority carrier velocity saturation is then included to make the study more detailed. The analysis then investigates the shifted germanium profile in the base to further minimize the base transit time. Finally, it is shown that a shifted germanium profile eventually evolves into a box-triangular Ge-profile in the SiGe base, which could simultaneously minimize the base transit time and reduce emitter delay by virtue of the high current gain. The analysis verifies that for an average Ge-dose of 7.5% Ge across the base, a box-triangular germanium profile in conjunction with an optimum base doping profile has an approximately identical base transit time and a 30% higher current gain, in comparison with an optimum base doping and triangular Ge-profile across the whole base.

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An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGe HBTs

Cited by 2 publications

References 22 publications

Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance

Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance

A novel approach for justification of box-triangular germanium profile in SiGe HBTs

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