An Isolated Variable-Resistance Active Gate Driver for Use in SiC-Driven Inverters

Wiesemann, Julius; Mertens, Axel

doi:10.1109/iecon48115.2021.9589774

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Cited by 4 publications

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“…In high-voltage (HV) and high-power elds, SiC MOSFET is widely used for its excellent performance [1][2][3]. The drain-source current of SiC MOSFET has the unsaturated characteristic, which is different from traditional Si MOSFET [4].…”

Section: Introductionmentioning

confidence: 99%

The integrated fast short-circuit protection technique with soft turn-off for SiC MOSFET

Cao

Zhou²,

Shi³

et al. 2022

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

The integrated fast short-circuit protection technique with soft turn-off for SiC MOSFET

Cao

Zhou²,

Shi³

et al. 2022

Microelectronics Reliability

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A Three-Level Voltage-Source Gate Driver for SiC MOSFETs in Synchronous Rectification Mode

Giannakis,

Philipps,

Blinov

et al. 2023

2023 IEEE 17th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG)

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Experimental Comparison of an Active Gate Driver and a dv/dt Filter to Reduce the Output dv/dt of a SiC EV Drive Inverter

Wiesemann

Mertens

2022

IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society

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An Isolated Variable-Resistance Active Gate Driver for Use in SiC-Driven Inverters

Cited by 4 publications

References 10 publications

The integrated fast short-circuit protection technique with soft turn-off for SiC MOSFET

The integrated fast short-circuit protection technique with soft turn-off for SiC MOSFET

A Three-Level Voltage-Source Gate Driver for SiC MOSFETs in Synchronous Rectification Mode

Experimental Comparison of an Active Gate Driver and a dv/dt Filter to Reduce the Output dv/dt of a SiC EV Drive Inverter

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