2022
DOI: 10.1002/adma.202270278
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An Irradiance‐Adaptable Near‐Infrared Vertical Heterojunction Phototransistor (Adv. Mater. 40/2022)

Abstract: Phototransistors In article number 2205679, Peiguang Yan, Zhenhua Sun, and co‐workers report a near‐infrared phototransistor with benign light‐irradiance adaptability using a vertically stacking graphene/lead sulfide quantum dots/graphene heterojunction as the conductive channel. The dynamic trapping and detrapping processes in the quantum dot film enable the inhabitation or potentiation of the photoresponse, based on which the photopic or scotopic adaptation behavior of the human retina is successfully mimick… Show more

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Cited by 10 publications
(19 citation statements)
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“…[ 21–36 ] Besides, the three‐terminal architecture enables such devices to achieve accelerating signal processing function utilizing the gate‐adjustable plasticity compared with two‐terminal synaptic devices. [ 37–40 ] Although currently reported optoelectronic synaptic transistors have also presented the capability of signal preprocessing, most of them respond to the photonic stimulation with specific wavelengths or limited wavelength range, and neglect the effect of gate voltage on data preprocessing. Consequently, to mimic the broadband sensing and preprocessing functions of the human retina, and further extend the retinal perception range beyond visible (vis) light, there is a high demand to develop optoelectronic synaptic transistors that can efficiently detect and preprocess light signals with the spectral range from ultraviolet (UV) to near‐infrared (NIR) light.…”
Section: Introductionmentioning
confidence: 99%
“…[ 21–36 ] Besides, the three‐terminal architecture enables such devices to achieve accelerating signal processing function utilizing the gate‐adjustable plasticity compared with two‐terminal synaptic devices. [ 37–40 ] Although currently reported optoelectronic synaptic transistors have also presented the capability of signal preprocessing, most of them respond to the photonic stimulation with specific wavelengths or limited wavelength range, and neglect the effect of gate voltage on data preprocessing. Consequently, to mimic the broadband sensing and preprocessing functions of the human retina, and further extend the retinal perception range beyond visible (vis) light, there is a high demand to develop optoelectronic synaptic transistors that can efficiently detect and preprocess light signals with the spectral range from ultraviolet (UV) to near‐infrared (NIR) light.…”
Section: Introductionmentioning
confidence: 99%
“…Transparent electrodes or flat structured MSM structures can be adopted to solve this problem as shown in Figure a‐i. Graphene [ 31,32 ] and Indium tin oxide (ITO) [ 33,34 ] are available for transparent electrodes. Graphene can be large‐area grown and patterned for electrodes by lithography and etching, and ITO can be designed for electrodes by mask sputtering.…”
Section: Classification Of Structures Design and Fabrication Technologymentioning
confidence: 99%
“…Zhang et al. [ 32 ] implemented irradiance adaptable photodetectors based on a vertically stacking graphene/lead sulfide quantum dots/graphene heterojunction as shown in Figure 11e. The position of the Fermi energy level of graphene is modulated by the gate voltage, so that the defect states below the Fermi energy level in the forbidden band will be gradually filled, and trapped electrons above the Fermi level will be de‐trapped gradually over time.…”
Section: Design and Mechanism Of Photodetectors With Retina‐like Temp...mentioning
confidence: 99%
“…Because the Fermi level can be regulated by the V G , the V G -controlled charge trapping process allows tunability of the photocurrent gain and decay times. Thus, the environmentally adaptive sensing behavior is well represented in this device . The device showed excellent performance with a responsivity of 2.16 × 10 4 A/W, a detectivity of 9.63 × 10 11 jones, and a rejection ratio ( I photo / I dark ) of 2.2 × 10 8 under 213 nm light illumination.…”
mentioning
confidence: 90%
“…Thus, the environmentally adaptive sensing behavior is well represented in this device. 22 The device showed excellent performance with a responsivity of 2.16 × 10 4 A/W, a detectivity of 9.63 × 10 11 jones, and a rejection ratio (I photo /I dark ) of 2.2 × 10 8 under 213 nm light illumination. This work shows the possibility of achieving a tunable SBPD to meet the requirements of different applications by simply adjusting its V G .…”
mentioning
confidence: 94%