An ionic compensation strategy for high-performance mesoporous perovskite solar cells: healing defects with tri-iodide ions in a solvent vapor annealing process

Abstract

The surface morphology and J–V curves of CH3NH3PbI3 films with and without IPA/[I3−] treatment.

Multilevel resistive switching memory based on a CH3NH3PbI3-xClx film with potassium chloride additives

“…6(b) shows the core level Pb 4f spectrum. Two main peaks of Pb 4f 5/2 and Pb 4f 7/2 are observed at 143.18 eV and 138.21 eV, respectively; this finding is consistent with previous reports [30,31]. It is noteworthy that additional small peaks with lower binding energies (141.41 eV and 136.60 eV) with the signature of Pb 0 were detected by XPS [31].…”

Passivating Detrimental DX Centers in CH3NH3PbI3 for Reducing Nonradiative Recombination and Elongating Carrier Lifetime

“…[4,12,[14][15][16][17][18][19] In the conventional picture of semiconductor defects, V I is a shallow donor and usually positively charged. [4,12,[14][15][16][17][18][19] In the conventional picture of semiconductor defects, V I is a shallow donor and usually positively charged.…”

Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−xClx Film with Potassium Chloride Additives

“…Two main peaks of Pb 4f 5/2 and Pb 4f 7/2 are observed at 143.18 eV and 138.21 eV, respectively. It is noteworthy that additional small peaks with lower binding energies (141.41 eV and 136.60 eV) with the signature of Pb 0 were detected by XPS [33,34]. These results indicate that V˙I exists in the KCl-doped MAPIC layer.…”