An ion-modified cluster model for studying the correlation of Raman intensity and electric conductance of single molecule in the molecular junction

Ding, Song‐Yuan; Ren, Bin; Zhang, Tian

doi:10.1360/n032017-00211

Cited by 2 publications

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“…This result is ascribed to the increasing polarizability derivatives, which is caused by the decrease in the energy gap between the HOMO and the LUMO. 43,44 The selected normal modes of 1,4-benzenedithiol that are responsible for the enhanced Raman signals can be found in Figure S9. The chemical enhancement mechanism predominately contributes to the side-gating enhanced Raman scattering spectra based on the theoretical calculations.…”

Section: Resultsmentioning

confidence: 99%

Molecular Orbital Gating Surface-Enhanced Raman Scattering

et al. 2018

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One of the promising approaches to meet the urgent demand for further device miniaturization is to create functional devices using single molecules. Although various single-molecule electronic devices have been demonstrated recently, single-molecule optical devices which use external stimulations to control the optical response of a single molecule have rarely been reported. Here, we propose and demonstrate a field-effect Raman scattering (FERS) device with a single molecule, an optical counterpart to field-effect transistors (a key component of modern electronics). With our devices, the gap size between electrodes can be precisely adjusted at subangstrom accuracy to form single molecular junctions as well as to reach the maximum performance of Raman scattering via plasmonic enhancement. Based on this maximum performance, we demonstrated that the intensity of Raman scattering can be further enhanced by an additional ∼40% if the orbitals of the molecules bridged two electrodes were shifted by a gating voltage. This finding not only provides a method to increase the sensitivity of Raman scattering beyond the limit of plasmonic enhancement, but also makes it feasible to realize addressable functional FERS devices with a gate electrode array.

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Section: Resultsmentioning

confidence: 99%

Molecular Orbital Gating Surface-Enhanced Raman Scattering

et al. 2018

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Surface‐Enhanced Raman Spectroscopy: General Introduction

Ding

Zhang

You

et al. 2020

Encyclopedia of Analytical Chemistry

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The surface‐enhanced Raman scattering effect refers to the effect was discovered in the mid‐1970s, by which the intrinsically low detection sensitivity of Raman spectroscopy is no longer a fatal disadvantage for this analytical tool. As a general introduction of surface‐enhanced Raman spectroscopy (SERS), the over 40‐year history of SERS is first overviewed, showing that SERS has gone through a tortuous pathway to develop into a powerful diagnostic technique. We then describe the principle of SERS and enhancement mechanisms, illustrating that SERS is mainly surface plasmon resonance (SPR) and nanostructure‐enhancement phenomenon. The SERS measurement procedures, in particular the preparation of various SERS active substrates, are discussed. Based on the four important criteria in analytical science, i.e. detection sensitivity (energetic, spatial, and temporal), resolution, generality, and reliability, we highlight two different approaches to utilize the strength and offset the weakness of SERS. With the enormously high sensitivity and spectral resolution, SERS has been applied successfully to surface analysis and trace analysis by gaining meaningful information from an extremely small quantity of species even down to single molecules. To significantly improve the surface generality and spatial resolution, tip‐enhanced Raman spectroscopy (TERS) was invented in 2000. To greatly improve the material generality and measurement reliability, shell‐isolated nanoparticle‐enhanced Raman spectroscopy (SHINERS) was introduced in 2010. Finally, prospective developments of SERS in substrates, methods, and theory are briefly discussed.

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An ion-modified cluster model for studying the correlation of Raman intensity and electric conductance of single molecule in the molecular junction

Abstract: Ding SY, Ren B, Tian ZQ. An ion-modified cluster model for studying the correlation of Raman intensity and electric conductance of single molecule in the molecular junction.

Cited by 2 publications

References 11 publications

Molecular Orbital Gating Surface-Enhanced Raman Scattering

Molecular Orbital Gating Surface-Enhanced Raman Scattering

Surface‐Enhanced Raman Spectroscopy: General Introduction

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