2022
DOI: 10.1039/d1ce01707a
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An ion migration induced self-powered photoelectrical detector based on FAPbBr3 single crystals

Abstract: Self-powered photoelectric devices as a new type of sensor without an external power source have a great potential advantage in the next generation of portable and wearable personal devices. The...

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Cited by 6 publications
(6 citation statements)
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“…4b, the I ON / I OFF ratio reached as high as 22 240 at a bias of 30 V, which is a dramatic increase compared to previously reported FAPbBr 3 SCs with values of 30–90 (ref. 37) and 100–1000. 14 Fig.…”
Section: Resultsmentioning
confidence: 99%
“…4b, the I ON / I OFF ratio reached as high as 22 240 at a bias of 30 V, which is a dramatic increase compared to previously reported FAPbBr 3 SCs with values of 30–90 (ref. 37) and 100–1000. 14 Fig.…”
Section: Resultsmentioning
confidence: 99%
“…[ 26,27 ] All the XRD peaks are slightly shifted toward higher angle compared with the pure phase FAPbI 3 , due to the smaller r Br than r I. [ 16,28–30 ]…”
Section: Resultsmentioning
confidence: 99%
“…[26,27] All the XRD peaks are slightly shifted toward higher angle compared with the pure phase FAPbI 3 , due to the smaller r Br than r I. [16,[28][29][30] The optical and electrical properties of the as-fabricated FASC were also investigated. The optical bandgap(Eg) of 2.043 eV is obtained from the Tauc plot of the measured absorption spectrum according to Kubellka-Munk equation (Figure 1d): [31] (𝛼h𝜈) 2…”
Section: Resultsmentioning
confidence: 99%
“…As shown in Figure 6a and S9, the photoresponse of the AZO/FPB-4/Au junction device was measured from 1 to 30 V under 405 nm light illumination (15.6 mW•cm −2 ). The ratio of photocurrent (I ON )/dark current (I OFF ) reaches as high as 10956 at a bias of 10 V, which is a significant increase compared to that from the previous FPB SC with values of 30−90 32 and 100−1000 12 grown from the ITC method. The higher I ON /I OFF ratio of the FPB planar device is attributed to the low trap density and high crystalline quality, which also demonstrate that the FAPbBr 3 SC grown by the seeded solution method is qualified for optoelectronic applications.…”
Section: Resultsmentioning
confidence: 99%