An involute gate-emitter configuration for thyristors

Storm, H. F.; Clair, Jean-Jacques

doi:10.1109/t-ed.1974.17958

Cited by 7 publications

(2 citation statements)

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“…However, this design does not maximize the gate current injection efficiency since the "anode-gate" pn junction is very close to the center of the chip. An "involute" design ( Figure 6.b) would be better suited for a reasonable trade-off between the device anode area and the gate efficiency [10]. While such a design guarantees a constant bend radius, the device periphery is susceptible to behave differently.…”

Section: Two Typical Cases Where 3d Simulations Are Helpfulmentioning

confidence: 99%

3D TCAD Simulations for More Efficient SiC Power Devices Design

et al. 2013

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SiC devices become more and more prominent in the power semiconductor industry. Thanks to a technology that seems to be mature enough, SiC devices become more and more sophisticated. Therefore, they can be serious competitors to existing silicon devices in not so distant future at least for high temperature and high power applications. In addition to undoubtedly better electrical and thermal properties, SiC devices still require attention regarding their design. Indeed, the material is still more expensive than silicon and some limitations such as the inability to create deep p-n junctions prevent from re-using existing silicon design. Therefore, SiC devices should be designed so that the best trade-off between active area and breakdown voltage is achieved. In such a context, 3D TCAD can be become an interesting approach mostly thanks to modern computer farms.

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Section: Two Typical Cases Where 3d Simulations Are Helpfulmentioning

confidence: 99%

3D TCAD Simulations for More Efficient SiC Power Devices Design

et al. 2013

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“…Consequently, the initial turn-on area should be made as large as possible and v L should be maximised. Interlacing of narrow cathode stripes with the gate metallisation stripes increases the initial injection region (Storm and St Clair 1974). Hard gate triggering also increases the neutral conducting area.…”

Section: Thyristor Switchingmentioning

confidence: 99%

Physics of semiconductor power devices

Blicher¹

1982

Rep. Prog. Phys.

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Semiconductor power devices are designed to rapidly switch or amplify high currents, to support high voltages, and to control electric power. Because of these requirements, their topographies and structures are different from those of small-signal devices. Specific designs are the result of the understanding of the physics of p-n junction HV breakdown, gain variation at high currents, current instabilities, etc. After introducing elementary semiconductor structures, the article reviews the basic principles of the operation of bipolar and field-effect power transistors and thyristors. This is followed by a discussion of phenomena of special interest for power devices: junction avalanche breakdown, the effect of the current level on the current gain, dynamic and static behaviour at high currents and thermal properties and instabilities. The review includes recent advances in device physics and introduces the reader to new methods of improving device performance. Power is a relative concept-at microwave frequencies a few watts is a very large quantity; this review therefore includes a section on microwave power devices.

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2017

Foundations of Pulsed Power Technology

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An involute gate-emitter configuration for thyristors

Cited by 7 publications

References 1 publication

3D TCAD Simulations for More Efficient SiC Power Devices Design

3D TCAD Simulations for More Efficient SiC Power Devices Design

Physics of semiconductor power devices

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