2011
DOI: 10.1016/j.jallcom.2011.01.133
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An investigation on linear optical properties of dilute Cr doped ZnO thin films synthesized via sol–gel process

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Cited by 39 publications
(19 citation statements)
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“…Doped ZnO films are generally deposited by pulsed laser deposition (PLD) [44][45][46][47][48], magnetron co-sputtering [49][50][51][52][53][54][55], including direct current (DC) reactive and radio-frequency (RF), molecular beam epitaxy (MBE) [56][57][58][59][60], chemical vapor deposition [61,62] and sol-gel methods [63][64][65][66][67]. It is known that piezoelectricity is related to the crystallographic quality of ZnO films and high c-axis orientation can lead to good piezoelectricity of ZnO films [68][69][70][71][72].…”
Section: Film Growth Of Tm-doped Znomentioning
confidence: 99%
“…Doped ZnO films are generally deposited by pulsed laser deposition (PLD) [44][45][46][47][48], magnetron co-sputtering [49][50][51][52][53][54][55], including direct current (DC) reactive and radio-frequency (RF), molecular beam epitaxy (MBE) [56][57][58][59][60], chemical vapor deposition [61,62] and sol-gel methods [63][64][65][66][67]. It is known that piezoelectricity is related to the crystallographic quality of ZnO films and high c-axis orientation can lead to good piezoelectricity of ZnO films [68][69][70][71][72].…”
Section: Film Growth Of Tm-doped Znomentioning
confidence: 99%
“…Subsequently, various experiments on ZnO doped by 3d transition metal ions in different forms were carried out to confirm the predictions of RTFM. Unfortunately, the experimental results could not reach definite conclusions owing to controversial reports as the findings differ widely [3][4][5] in this regard. The same material system has been reported to display ferromagnetic, paramagnetic or spin glass behavior, depending on the sample preparation parameters.…”
Section: Introductionmentioning
confidence: 97%
“…An alternative strategy for increasing the electron-hole life-time is the formation of hetero-structures between the semiconductors with different majority carrier type. By forming junction between p-type and n-type semiconductors a depletion layer at the p-n interfacial region can be formed that induces an electric field, which results in decreased electron-hole pair recombination rate 4,5,6,7 A major factor in controlling photocatalytic efficiencies is their optical properties, which highly depends on size, dopants, impurities, and morphology of the materials 8,9 . In addition to the optoelectronic properties, the catalytic performance of semiconductor materials also relies highly on the surface area as well as the number of active sites present on the catalyst surface 10,11 .…”
Section: Introductionmentioning
confidence: 99%