An investigation of the temporal evolution of plasma potential in a 60 MHz/2 MHz pulsed dual-frequency capacitively coupled discharge

Mishra, Anurag; Jeon, Min Hwan; Kim, Kyong Nam; Yeom, Geun Young

doi:10.1088/0963-0252/21/5/055006

Cited by 20 publications

(25 citation statements)

References 43 publications

(63 reference statements)

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“…However, using an emissive probe, when the probe is electrically floating with no net current drawn from the plasma, to determine V p can largely overcome these problems. Emissive probes have been proved superior to Langmuir probes, particularly in pulsed plasmas, for determining the plasma potential and have been widely used [29][30][31][32][33][34][35][36][37][38][39][40][41]. An emissive probe could be used in three different ways: (a) the 'point of inflection method', (b) the 'diversion method' and (c) the 'saturated floating-potential' method.…”

Section: Emissive Probesmentioning

confidence: 99%

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Mishra¹,

Seo²,

Kim³

et al. 2013

J. Phys. D: Appl. Phys.

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Using an emissive probe technique in 'saturated floating-potential' mode, an investigation of temporal evolution of plasma potential (V p) in a large-area pulsed dual-frequency (2 MHz/13.56 MHz) inductively coupled plasma (p-DF-CCP) is carried out. The discharge is sustained by an external type ICP antenna at a pressure of 10 mTorr in argon gas environment. The 2 MHz rf is pulsed at a frequency of 1 kHz and a duty ratio of 50%. The emissive probe is located at the centre of the substrate and 20 mm above (r = 00 mm and z = −20 mm) it. The low-frequency power (P 2 MHz) is varied from 100 to 800 W, whereas the high-frequency power (P 13.56 MHz) from 100 to 700 W. V p remains positive during the whole pulse period. The prominent features in the V p profile remain similar under all operating conditions; however, the magnitude of V p depends on the applied rf powers. For further investigation, three distinct regions in a typical V p profile are clearly identified as 'overshoot-immediately after pulse begins', the 'on-time' and the 'off-time'. V p increases with increasing P 13.56 MHz and has reverse trend with P 2 MHz. The electron temperature (T e) is calculated using the relation between floating potential (V f) and plasma potential (V p) for the argon plasma and it is found that T e increases with increasing P 13.56 MHz and decreases with P 2 MHz. It is found that V p could be modulated using a suitable power combination on two frequencies (P 13.56 MHz /P 2 MHz). This paper is an attempt to investigate the time-resolved V p and T e with rf powers in a pulsed dual-frequency ICP.

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Section: Emissive Probesmentioning

confidence: 99%

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Mishra¹,

Seo²,

Kim³

et al. 2013

J. Phys. D: Appl. Phys.

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“…Using an emissive probe, the variation of instant electron temperature was calculated after measurement of instant plasma potentials (V p , measured at a heated temperature) and instant floating potentials (V f , measured the room temperature) using the following equation. 19 V…”

Section: Resultsmentioning

confidence: 99%

Etch Characteristics of SiO2 Using Pulsed Triple-Frequency for Ar/C4F6/O2 Capacitive Coupled Plasmas

Jeon

Park

Kim

et al. 2016

j nanosci nanotechnol

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We investigated the effects of 13.56 MHz radio frequency (rf) power as a medium frequency power on the plasma characteristics and etch properties of an amorphous carbon layer (ACL) and SiO 2 , using Ar/C 4 F 6 /O 2 gas mixtures in a capacitively coupled plasma (CCP) system operated with pulsed superimposed triple-frequency power of 60 MHz (source)/13.56 MHz (bias)/2 MHz (bias). Compared to the dual frequency rf power of 13.56 MHz (400 W)/2 MHz (900 W) or 60 MHz (400 W)/2 MHz (900 W), the use of triple-frequency rf power of 60 MHz/13.56 MHz/2 MHz (900 W) showed a better anisotropic SiO 2 etch profile, with the higher etch selectivity of SiO 2 over the ACL. We observed the best SiO 2 etch characteristics when the rf powers of 60 MHz and 13.56 MHz were set as 60 MHz (200 W)/13.56 MHz (200 W). In addition, when we varied the pulse duty percentage of 13.56 MHz rf power from 25∼100% (continuous wave (CW)), while keeping the rf powers of 60 MHz/13.56 MHz/2 MHz at 200 W/200 W/900 W, respectively, and while maintaining the pulse duty percentage of 60 MHz and 2 MHz at 50%, the use of the synchronized pulse on/off condition (i.e., the use of 50% duty percentage of 13.56 MHz) also showed the best etch characteristics. The best SiO 2 etch characteristics and the highest etch selectivity of SiO 2 over the ACL (observed for both rf power ratios of 60 MHz (200 W)/13.56 MHz (200 W), and for the triple-frequency pulsing with the synchronized pulse on/off) were related to the higher CF x /F ratios, which increased the fluorocarbon polymer passivation on the ACL surface and SiO 2 sidewall during etching.

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“…Schematic diagram of an internal-type linear ICP system, a homemade emissive probe and an electrostatic probe used in this experiment. plasma potential, and floating potential as shown below 16 V…”

Section: Methodsmentioning

confidence: 99%

Characteristics of Pulsed Internal Inductively Coupled Plasma for Next Generation Display Processing

Kim¹,

Lee²,

Lee³

et al. 2014

j nanosci nanotechnol

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RF pulsed plasma characteristics of inductively coupled plasma (ICP) sources operated with internal linear type antennas for the next generation display processing were investigated. By applying the rf pulse mode in the ICP source, with decreasing the rf pulse duty percentage, the average electron temperature was decreased and the plasma non-uniformity was improved with decreasing the rf pulse duty percentage. In the case of plasma uniformity, for the same time average rf power of 3 kW to the ICP source, the plasma non-uniformity was improved from 8.4% at 100% of rf duty percentage to 6.4% at 60% of rf duty percentage due to the increased diffusion of the plasma during the pulse-off time. When SiO2 was etched using CF4, the etch rate uniformity was also improved due to the improvement of plasma uniformity.

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An investigation of the temporal evolution of plasma potential in a 60 MHz/2 MHz pulsed dual-frequency capacitively coupled discharge

Cited by 20 publications

References 43 publications

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Etch Characteristics of SiO2 Using Pulsed Triple-Frequency for Ar/C4F6/O2 Capacitive Coupled Plasmas

Characteristics of Pulsed Internal Inductively Coupled Plasma for Next Generation Display Processing

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