An investigation of the role of hydrogen in ion beam deposited a-C:H

Solid state magnetic resonance investigation of the thermally-induced structural evolution of silicon oxide-doped hydrogenated amorphous carbon

“…This lack of knowledge inhibits developing a fundamental understanding of the mechanisms by which the excellent thermal stability and tribological performance of a-C:H:Si:O are achieved. To gain insights into the structure and composition of DLCs, some of the most powerful tools in the material characterization arsenal have been used, including Raman spectroscopy [9,[16][17][18][19], X-ray photoelectron spectroscopy (XPS) [13,20,21], near edge X-ray absorption fine structure (NEXAFS) spectroscopy [22][23][24], electron energy loss spectroscopy (EELS) [25], Fourier-transform infrared spectroscopy (FT-IR) [26], X-ray reflectivity (XRR) [25], forward recoil elastic scattering (FRES) [27], nuclear magnetic resonance (NMR) spectroscopy [27][28][29][30][31][32][33][34][35][36][37][38][39][40][41], and electron paramagnetic resonance (EPR) spectroscopy [42][43][44][45][46].…”

Effect of substrate temperature on the properties of carbon-coated optical fibers prepared by plasma enhanced chemical vapor deposition

“…Besides sputtering techniques [11], ion beam deposition [12], and microwave plasma enhanced chemical vapor deposition [13], amorphous carbon films are often prepared by radio-frequency plasma enhanced chemical vapor deposition (rf-PECVD) with a high deposition rate and a low substrate temperature [7,10,14,15]. The amorphous carbon film prepared by rf-PECVD using a hydrocarbon as the precursor gas often contains a percentage of hydrogen, so it is usually classified as the hydrogenated amorphous carbon (a-C:H) film in the literature [2].…”

Effects of radio frequency powers on the characteristics of a-C:N/p-Si photovoltaic solar cells prepared by plasma enhanced chemical vapor deposition

“…Amorphous carbon films can be prepared at a low substrate temperature by using various methods, such as radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) [5][6][7][8], plasma enhanced chemical vapor deposition with electron cyclotron wave resonance source [9], microwave plasma chemical vapor deposition [10], sputtering deposition [11], filtered cathodic vacuum arc deposition [12], and ion beam deposition [13]. Amorphous carbon films prepared by rf-PECVD using methane (CH 4 ) and nitrogen (N 2 ) as the precursor gases usually contain a percentage of C-N bonds, so it is classified as the nitrogenated amorphous carbon (a-C:N) film in the literature [14].…”