An investigation of stable bonding for Au–Al solid phase diffusion bonding techniques

Mori, Miki; Fukuda, Yoshimasa; Kizaki, Yukio; Iida, Atsuko; Saito, M.

doi:10.1002/(sici)1520-6432(199902)82:2<11::aid-ecjb2>3.3.co;2-k

Cited by 5 publications

(5 citation statements)

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“…Gold wire–aluminum film connections are often found in semiconductor products, for instance. Studies of the binary intermetallics formed at these junctions have been crucial in optimizing the behavior of these components. , To facilitate the possible uses of rare earth aluminides and silicides in such applications, it is therefore relevant to investigate the behavior of gold in multinary intermetallic systems. In this work, the combination of gold, silicon, and early rare earth elements in molten aluminum produced four new and interrelated quaternary intermetallic structures.…”

Section: Introductionmentioning

confidence: 99%

RE(AuAl₂)_nAl₂(Au_xSi_1−x)₂: A New Homologous Series of Quaternary Intermetallics Grown from Aluminum Flux

Latturner¹,

Kanatzidis

2008

Inorg. Chem.

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The combination of early rare earth metals (La- to Gd and Yb), gold, and silicon in molten aluminum results in the formation of intermetallic compounds with four related structures, forming a new homologous series: RE[AuAl2]nAl2(AuxSi(1-x))2, with x approximately 0.5 for most of the compound and n = 0, 1, 2, and 3. Because of the highly reducing nature of the Al flux, rare earth oxides instead of metals can also be used in these reactions. These compounds grow as large plate-like crystals and have tetragonal structure types that can be viewed as intergrowths of the BaAl4 structure and antifluorite-type AuAl2 layers. REAuAl2Si materials form with the BaAl4 structure type in space group I4/mmm (cell parameters for the La analogue are a = 4.322(2) A, c = 10.750(4) A, and Z = 2). REAu2Al4Si forms in a new ordered superstructure of the KCu4S3 structure type, with space group P4/nmm and cell parameters of the La analogue of a = 6.0973(6) A, c = 8.206(1) A, and Z = 2. REAu3Al6Si forms in a new I4/mmm symmetry structure type with cell parameters of a = 4.2733(7) A, c = 22.582(5) A, and Z = 2 for RE = Eu. The end member of the series, REAu4Al8Si, forms in space group P4/mmm with cell parameters for the Yb analogue of a = 4.2294(4) A, c = 14.422(2) A, and Z = 1. New intergrowth structures containing two different kinds of AuAl2 layers were also observed. The magnetic behavior of all these compounds is derived from the RE ions. Comparison of the susceptibility data for the europium compounds indicates a switch from 3-D magnetic interactions to 2-D interactions as the size of the AuAl2 layer increases. The Yb ions in YbAu(2.91)Al(6)Si(1.09) and YbAu(3.86)Al(8)Si(1.14) are divalent at high temperatures.

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Section: Introductionmentioning

confidence: 99%

RE(AuAl₂)_nAl₂(Au_xSi_1−x)₂: A New Homologous Series of Quaternary Intermetallics Grown from Aluminum Flux

Latturner¹,

Kanatzidis

2008

Inorg. Chem.

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“…Gold wire−aluminum film connections are often found in semiconductor products, for instance. Studies of the binary intermetallics formed at these junctions have been crucial in optimizing the behavior of these components. , To facilitate the possible uses of rare earth aluminides and silicides in such applications, it is therefore relevant to investigate the behavior of gold in multinary intermetallic systems. In this work, the combination of gold, silicon, and thorium (or ThO 2 ) in molten aluminum produced three quaternary intermetallic compounds with new and interrelated structures.…”

Section: Introductionmentioning

confidence: 99%

Quaternary Intermetallics Grown from Molten Aluminum: The Homologous Series Th₂(Au_xSi₁_-_x)[AuAl₂]_nSi₂(n= 1, 2, 4)

et al. 2002

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An appropriate combination of Th or ThO2 with Au and Si in liquid aluminum has resulted in the formation of three new quaternary intermetallic compounds. All three materials grow as large platelike crystals and have structure types that define a new homologous series. Th2AuAl2Si3 is tetragonal, I41 /amd, with unit cell parameters a = 4.2119(4) Å and c = 36.165(5) Å. Th2Au3Al4Si2 and Th2Au5Al8Si2 both crystallize in the orthorhombic space group Cmmm, with cell parameters a = 4.266(1) Å, b = 23.574(8) Å, and c = 4.249(1) Å and a = 4.2612(8) Å, b = 35.661(7) Å, and c = 4.2487(8) Å, respectively. The Th2(Au x Si1 - x )[AuAl2] n Si2 structures feature planes of parallel infinite zigzag silicon chains alternating with slabs of antifluorite type AuAl2. The AuAl2 slabs increase in thickness going from Th2AuAl2Si3 (n = 1) to Th2Au5Al8Si2 (n = 4). All three materials show temperature independent Pauli paramagnetism and metallic conductivity. Band structure calculations were carried out on each compound using density functional theory (full potential LAPW method), and the details of the density of states have been correlated with the observed data.

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“…It is not so easy for an Al-Si-Cu pad to obtain the central bond area without friction slip. As the bonding temperature increases to 673 K, an alloy reaction occurs easily [42,43,89], but a thick reaction layer implies over-bonding. Figure 10 illustrates the growing process of the alloy reaction area by the slip-and-fold mechanism between the Au ball and the Al pad.…”

Section: Resultsmentioning

confidence: 99%

Solid-State Microjoining Mechanisms of Wire Bonding and Flip Chip Bonding

Takahashi

Fukuda

Yoneshima

et al. 2017

Journal of Electronic Packaging

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Low-temperature microjoining, such as wire (or ribbon) bonding, tape automated bonding (TAB), and flip chip bonding (FCB), is necessary for electronics packaging. Each type of microjoining takes on various aspects but has common bonding mechanisms regarding friction slip, plastic deformation, and friction heating. In the present paper, solid-state microjoining mechanisms in Au wire (ball) bonding, FCB, Al wire bonding (WB), and Al ribbon bonding are discussed to systematically understand the common bonding mechanisms. Ultrasonic vibration enhances friction slip and plastic deformation, making it possible to rapidly obtain dry interconnects. Metallic adhesion at the central area of the bonding interface is mainly produced by the friction slip. On the other hand, the folding of the lateral side surfaces of the Au bump, Au ball, and Al wire is very important for increasing the bonded area. The central and peripheral adhesions are achieved by a slip-and-fold mechanism. The solid-state microjoining mechanisms of WB and FCB are discussed based on experimental results.

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An investigation of stable bonding for Au–Al solid phase diffusion bonding techniques

Cited by 5 publications

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RE(AuAl₂)_nAl₂(Au_xSi_1−x)₂: A New Homologous Series of Quaternary Intermetallics Grown from Aluminum Flux

RE(AuAl₂)_nAl₂(Au_xSi_1−x)₂: A New Homologous Series of Quaternary Intermetallics Grown from Aluminum Flux

Quaternary Intermetallics Grown from Molten Aluminum: The Homologous Series Th₂(Au_xSi₁_-_x)[AuAl₂]_nSi₂(n= 1, 2, 4)

Solid-State Microjoining Mechanisms of Wire Bonding and Flip Chip Bonding

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An investigation of stable bonding for Au–Al solid phase diffusion bonding techniques

Cited by 5 publications

References 0 publications

RE(AuAl2)nAl2(AuxSi1−x)2: A New Homologous Series of Quaternary Intermetallics Grown from Aluminum Flux

RE(AuAl2)nAl2(AuxSi1−x)2: A New Homologous Series of Quaternary Intermetallics Grown from Aluminum Flux

Quaternary Intermetallics Grown from Molten Aluminum: The Homologous Series Th2(AuxSi1-x)[AuAl2]nSi2(n= 1, 2, 4)

Solid-State Microjoining Mechanisms of Wire Bonding and Flip Chip Bonding

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RE(AuAl₂)_nAl₂(Au_xSi_1−x)₂: A New Homologous Series of Quaternary Intermetallics Grown from Aluminum Flux

RE(AuAl₂)_nAl₂(Au_xSi_1−x)₂: A New Homologous Series of Quaternary Intermetallics Grown from Aluminum Flux

Quaternary Intermetallics Grown from Molten Aluminum: The Homologous Series Th₂(Au_xSi₁_-_x)[AuAl₂]_nSi₂(n= 1, 2, 4)