An investigation of recombination in gold-doped pin rectifiers

Cooper, R. W.

doi:10.1016/0038-1101(83)90086-2

Cited by 22 publications

(7 citation statements)

References 12 publications

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“…18 However, this technique requires extensive sample processing and may not be particularly suitable to a fabrication environment. In any case, once the bulk lifetime has been determined, then the noncontact PCD measurement can be employed to determine the effects of various surface treatments on the effective lifetime of the sample.…”

Section: Resultsmentioning

confidence: 99%

Proper interpretation of photoconductive decay transients in semiconductors having finite surface recombination velocity

Derhacobian

Walton

Luke

et al. 1994

Journal of Applied Physics

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The influence of finite surface recombination velocity on the proper interpretation of photoconductive decay (PCD) transients in semiconductors is discussed. The limitations of simple analytical equations which relate the observed effective lifetime to the material parameters are considered. It is shown that, under most circumstances, the correct application of the appropriate analytical expression requires some prior knowledge of the material parameters under investigation. Several methods are proposed to extract useful information from PCD experiments. Finally, the practicality of these methods is investigated by measuring the effective lifetimes of high-purity germanium and float-zone silicon using a noncontact PCD technique.

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Section: Resultsmentioning

confidence: 99%

Proper interpretation of photoconductive decay transients in semiconductors having finite surface recombination velocity

Derhacobian

Walton

Luke

et al. 1994

Journal of Applied Physics

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“…This data array covers almost four decades of related publications. [2][3][4][5][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] Different vapor phase deposition techniques with different chemical reactants were used for the film deposition.…”

Section: Summary Of Bpsg-related Published Consolidated Materialsmentioning

confidence: 99%

“…Silicon dioxide films.-In Table V, data for different asdeposited SiO 2 thin films are presented; 2,5,20,31,42,[50][51][52][53][54][55][56][57][58][59] IV show that these films revealed tensile stress type with values up to 290 MPa. 35 Therefore, it can be reasonable to evaluate the as-deposited film density as a parameter linked to as-deposited CVD film stress.…”

Section: Summary Of Data For Apcvd Lpcvd Pecvd Thin Filmsmentioning

confidence: 99%

“…75 Here need to note that phosphorus is known to save double P=O bond in oxygen-contained compounds. Thus, the commonly used reaction scheme 20,76 (≡Si-O-) 3 P=O+H 2 O → (≡Si-O-) 3 P(OH) 2 seems to be incorrect. PSG film interaction with water (moisture) is described correctly as follows: (≡Si-O-) 3 OP+H 2 O → (≡Si-O-) 2 OP-OH+≡Si-OH.…”

Section: Film Stress-composition Correlationsmentioning

confidence: 99%

“…Severe moisture absorption effects with phosphorus concentration loss (sometimes named "phosphorus leaching") were demonstrated in a number of publications for PSG and BPSG this films, for instance. 20,75,76 Thus, two film features need to be taken into account in region (I) with the increase of phosphorus content up to about 4 wt%. The first one is structure ordering, and the second one is the increase of PO 4 tetrahedra content which is able to react with the ambient moisture.…”

Section: Film Stress-composition Correlationsmentioning

confidence: 99%

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Review—Mechanical Stress in Chemically Vapor Phase Deposited Boron- and Phosphorus-Contained Silicate Glass Thin Films: A Review

Vasilyev

Kittilsland

2020

ECS J. Solid State Sci. Technol.

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This article provides an overview of the published mechanical stress data for boron-and phosphorus-contained silicate glass films deposited by a variety of chemically vapor deposited (CVD) techniques, i.e. atmospheric and sub-atmospheric pressure (APCVD, SACVD), low pressure, plasma-enhanced (LPCVD, PECVD). The emphasis is done on borophosphosilicate glass films (BPSG) dedicated for the use in micro-electro-mechanical system (MEMS) and micro-opto-electro-mechanical system (MOEMS) technologies as a material with significantly higher film thickness as compared with its traditional use in microelectronics technology as a flow-able planarized interlayer dielectric. The article covers stress features of as-deposited and thermally annealed films with the boron and phosphorus concentration range in between about 1-12 wt%. Phosphorus is detected as a main film component responsible for stress type (tensile or compressive) and its particular values. Film deposition techniques strongly affect the film stress at low phosphorus content in the films, providing either tensile (APCVD, SACVD), or compressive (LPCVD, PECVD) stress types. These effects explained with differences in CVD kinetics and hydrogen-contained CVD reaction by-products formation.

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