We observe density induced 90 • rotations of the anisotropy axes in transport measurements at half-filled high Landau levels in the two dimensional electron system, where stripe states are proposed (ν=9/2, 11/2, etc). Using a field effect transistor, we find the transition density to be 2.9×10 11 cm −2 at ν=9/2. Hysteresis is observed in the vicinity of the transition. We construct a phase boundary in the filling factor-magnetic field plane in the regime 4.4 < ν < 4.6. An in-plane magnetic field applied along either anisotropy axis always stabilizes the low density orientation of the stripes. The physics of electrons in higher Landau levels has recently drawn much attention due to the discovery of large transport anisotropies at half fillings (ν = 9/2, 11/2 etc) in high quality two dimensional electron gases (2DEG) in GaAs [1,2]. At these filling factors, longitudinal magneto resistances R xx of samples grown on (001)-oriented GaAs show strong maxima in the 110 direction and deep minima in the 110 direction. The ratio of the resistance values can exceed 1000:1 in high quality samples. This large anisotropy is viewed as strong evidence for the formation of a unidirectional Charge Density Wave or so called "stripe state" around these filling factors [3,4,5,6]. Calculations based on the Hartree-Fock approximation show the stripes to form as the result of the competition between the short-range attractive exchange interaction and the long-range Coulomb repulsion. Recently there appeared calculations beyond the Hartree-Fock approximation [7,8,9,10,11]. Some of them propose the existence of liquid crystalline states with stripe ordering and broken rotational symmetry [7,10]. Employing an edge state transport mechanism, the "easy"(low resistance) axis is along the stripes whereas the "hard" (high resistance) axis is perpendicular to the stripes. This identification is supported by experiments [12].In spite of the strong evidence supporting the formation of a stripe state, the origin of its preferred orientation remains poorly understood [13,14,15]. Theory does not a priori provide a preferred direction for the stripes. However, all previous experiments have identified the 110 direction as the "easy" axis. It is often assumed that anisotropic imperfections at GaAs/AlGaAs interface act as the native symmetry breaking potential. Anisotropic roughness has been observed in GaAs layers grown by Molecular Beam Epitaxy [16]. Two groups have investigated the correlation between the surface roughness and the orientation of the stripes which form a few thousandÅ below the surface. Atomic Force Microscope images reveal the presence of roughness elongated along both the 110 and the 110 directions. However, its correlation with the orientation of the stripes remains controversial [17,18]. Theoretical studies on the influence of a simple periodic modulation on the orientation of the stripes suggest that they prefer to align perpendicular to a weak potential [19,20]. However, a parallel alignment may occur in the strong potential limi...