An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures

Ahia, Chinedu Christian; Tile, Ngcali; Urgessa, Z.N.; Botha, J.R.; Neethling, J.H.

doi:10.1016/j.jcrysgro.2016.11.021

Cited by 8 publications

(6 citation statements)

References 18 publications

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“…To date, a consensus is yet to be reached with regards to the emission wavelength of InSb/GaSb QDs. In this paper, we extend our previous investigations 11,12 and report on the effect of stacking on the NIR-PL properties of unintentional InGaSb/GaSb QWs, formed during an attempt to fabricate capped InSb/GaSb QDs.…”

Section: Introductionsupporting

confidence: 67%

“…Irrespective of the epitaxial technique adopted, the development of InSb/GaSb QDs has been reported 6,7 to be challenging due to the relatively weak indium-antimony (In-Sb) binding energy, which gives rise to a long migration length of In adatoms on an Sb-terminated surface. Many studies [8][9][10] have reported PL emission of InSb/GaSb QDs within the near-IR (NIR) region; however, transmission electron microscopy (TEM) studies reported recently 11,12 have illustrated the inadvertent formation of an InGaSb quantum well (QW) after capping of InSb QDs, which gave rise to PL spectra similar to what has earlier been reported by some groups [8][9][10] to be emission from InSb QDs within the NIR region. Emission within the MIR region have been reported 6 for this material system.…”

Section: Introductionmentioning

confidence: 78%

“…A more detailed description of the growth procedure and sample preparation has been reported elsewhere. 11,12 All the layers in the samples used for this study were deposited without growth interruption. of InSb QD layers embedded between the GaSb buffer and cap layers for each sample, while the fourth sample in which uncapped InSb dots were grown directly on a 300 nm GaSb buffer layer was used as a reference for SPM studies.…”

Section: Methodsmentioning

confidence: 99%

“…A detailed description of the low energy PL lines in this study and their behaviour with laser power and temperature has been reported elsewhere. 11,12 …”

Section: -8mentioning

confidence: 99%

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Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells

et al. 2018

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The effect of stacking on the near-infrared photoluminescence (NIR-PL) of InGaSb/GaSb quantum wells (QWs) which were inadvertently formed during an attempt to fabricate stacked InSb/GaSb quantum dots (QDs) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) are investigated in this work. The morphology of uncapped dots was studied by means of scanning probe microscopy (SPM) which shows a significant deviation in the shape and density of dots grown directly on the buffer compared to those that terminated an “embedded-dot” sample. Cross-sectional scanning transmission electron microscopy (STEM) and transmission electron microscopy (TEM) of the capped structures clearly revealed the formation of QWs in the capped structures. An increase in the number of InSb QD-layers, which metamorphosed into QWs, was observed to cause an increase in the luminescence spectral line width and a long-wavelength shift of the QW PL lines, together with an enhancement in the strength of PL emission. Variations in layer thicknesses and alloy composition introduced as a result of inter-diffusion of Ga and In which is enhanced by the prolonged annealing time of the QDs (during spacer/cap layer deposition) and In adatom migration is suggested to alter the morphology of the capped dots and induce a change in PL peak positions and the spectral linewidth of the NIR low energy lines.

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Section: Introductionsupporting

confidence: 67%

Section: Introductionmentioning

confidence: 78%

Section: Methodsmentioning

confidence: 99%

“…A detailed description of the low energy PL lines in this study and their behaviour with laser power and temperature has been reported elsewhere. 11,12 …”

Section: -8mentioning

confidence: 99%

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Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells

et al. 2018

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“…e InSb-based ternary as well as quaternary alloys are equally valuable for realizing midwavelength infrared detectors [36][37][38][39]. More recently, there has been a growing challenge to explore the possibility of developing InSb-based quantum dots and nanostructured laser diodes [40][41][42] for optoelectronic as well as photonic device applications in the 3-5 μm wavelength range for room temperature operations.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Qian

Liang

Luo

et al. 2018

Advances in Materials Science and Engineering

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A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

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Advances in the Use of Atomic Force Microscopy as a Diagnostic Tool for Solar Cells Characterization: From Material Design to Device Applications

Ahia,

Meyer

2023

Physica Status Solidi (a)

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Considerable efforts in search for an effective characterization technique for photovoltaic devices with utmost precision is on the increase. For precise analysis and tailoring of device performance, a reliable technique is vital. Atomic force microscopy is one of the leading surface analysis techniques of choice for probing surface patterns in a variety of materials with atomic precision using a cantilever. It has evolved as a reliable technique for the investigation of subatomic scale properties of materials such as photocurrent heterogeneity, electromechanical response, charge distribution, molecular weight effects, and many other material parameters. The integration of artificial intelligence hybrid algorithms in atomic force microscope for optoelectronic device fabrication and characterization has increasingly emerged to be desirable due to its reliability and effectiveness in achieving high image resolution, automated analysis, actuation, and the coupling of manufactured units with a precision down to atomic units. In this review, an investigation of topical developments in the use of atomic force microscopy as a diagnostic tool for solar cells characterization is presented with special focus on polymer solar cells, perovskite solar cells, quantum dots‐sensitized solar cells, dye‐sensitized solar cells, fullerene‐based solar cells, III‐V‐based solar cells, and silicon‐based solar cells.

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An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures

Cited by 8 publications

References 18 publications

Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells

Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells

Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Advances in the Use of Atomic Force Microscopy as a Diagnostic Tool for Solar Cells Characterization: From Material Design to Device Applications

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