An investigation of millimeter wave switches based on shunt transistors including SPDT SWITCH MMICs up to 300 GHz

State of the Art Sub-Terahertz Switching Solutions

“…In [43] the insertion loss of 1.5-4.5 dB and 13.5-22.8 dB isolation was reported in 122-330 GHz range. Switch presented in [44] operates in 200- 330 GHz band with insertion loss in 1.7-5 dB range and isolation over 14 dB. As can be noticed, performance of these devices is only slightly worse compared to aforementioned InP DHBT devices working in similar frequency range reported in [29] an [32].…”

“…This construction also allows to optimize performance of the transistors by changing indium concentration in the channel [39]. There are multiple examples of the InGaAs mHEMT based switches for mm-wave frequency range [40][41][42][43][44][45][46][47]. Most of them are based on typical λ/4 shunt topology (fig.…”

“…16). In [40] a shunt switch operating in 53-150 GHz frequency range is presented. It achieves insertion loss under 3 dB which is only slightly higher than for state of the art SiGe HBT and GaN HEMT devices, but at the same time the isolation is significantly higher over 36 dB in whole operating frequency range.…”

“…17). InGaAs mHEMT switches for higher operating frequencies were presented in [43] and [44]. In [43] the insertion loss of 1.5-4.5 dB and 13.5-22.8 dB isolation was reported in 122-330 GHz range.…”