An investigation of a new generation of progressive mask defects on the pattern side of advanced photomasks

Bhattacharyya, Kaustuve; Eickhoff, Mark; Grenon, Brian J.; Ma, Mark; Pas, Sylvia

doi:10.1117/12.601010

Cited by 2 publications

(3 citation statements)

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“…Since the introduction of optical lithography with deep ultraviolet (DUV) of 193 nm, photo-activated defect formation on a photomask (PM) has become a considerable concern in the semiconductor industry. [1][2][3][4] It is expected to be more serious when an extreme-UV (EUV) technique emerges in the near future owing to the much higher photon energy. 5) The PM is composed of many components or materials such as quartz, chrome film, a pellicle, a pellicle frame, and adhesives.…”

Section: Introductionmentioning

confidence: 99%

“…When a contaminant layer or crystal, known as haze, is formed on the surface of a PM by photoreaction, the transmittance of the PM will decrease to disturb the patterning. [1][2][3][4] Here, the pellicle is a thin, transparent polymer membrane mounted on a PM to protect its patterned surface from airborne particulates. Thus far, not much attention has been paid to the pellicle itself as long as a high transmission is guaranteed.…”

Section: Introductionmentioning

confidence: 99%

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Optical Investigation of Deep Ultraviolet Degradation of Pellicles

Cheon¹,

Choi

Oh³

et al. 2010

Jpn. J. Appl. Phys.

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As optical lithography goes deep into the ultraviolet (UV) range for higher resolution, high-energy photons cause many problems that are associated with the photomask (PM). Upon repeated deep-UV exposure, unwanted crystals or layers can form on the PM surface following the photoreaction of surrounding contaminants. Moreover, the pellicle that is a part of the PM can react with deep UV, although it is designed to show high transparency and radiation durability. Our pellicle showed an initial reduction in thickness and then an increase in absorption after extended exposure to the 193 nm line of an ArF excimer laser. Both phenomena were responsible for the transmission loss of a pellicle. Particularly, the transmission loss caused by the thickness reduction was related to the interference effect. Lithography simulation showed that the reduced transmission by the pellicle led to the critical dimension variation. Moreover, a non-uniform reduction of thickness near the edge of the exposed area suggested that the apodization effect might occur near the edge of patterns.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical Investigation of Deep Ultraviolet Degradation of Pellicles

Cheon¹,

Choi

Oh³

et al. 2010

Jpn. J. Appl. Phys.

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show abstract

“…The most commonly detected contaminants are ammonium sulfate, ammonium oxalate, cyanuric acid, hydrocarbons, and organo-silicon compounds. 2 Figure 2 shows the typical levels of contaminants often found on photomasks and optical elements. We obtained these results using time-of-flight secondaryion mass spectroscopy (ToF-SIMS).…”

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confidence: 99%