The effect of chemical etching and the oxide growth on the etched surfaces on n-and pInP(100) have been studied using x-ray photoelectron spectroscopy. The samples were etched in HCI (1 molar in methanol) and then annealed at 650 K in a vacuum for 1 hour. After this procedure both samples were oxidized in air at room temperature for a long time. The stoichiometry of the oxide layer was determined by angleresolved analysis of core level spectra.The surface treatment leads to an indium-rich surface. After annealing the In/P atomic ratios amount to 2.0 and 1.5 for n-InP and pInP, respectively. Most of the oxygen on the surface after etching and annealing is presented as In,O, and In(OH), .Within the oxide layers of the air-oxidized samples the In/P atomic ratios vary from 2.5 to 3.7 for both n-and pInP showing a depletion of P during the oxidation. From angledependent measurements it is concluded that the oxide layers consist of InPO, and In(OH), whereas the outer layer is InP0,-rich. The presence of In,O, can be suggested in the oxide layer of n-InP only. The oxidized ptype sample contains more oxygen than the n-type one.