2023
DOI: 10.3390/s23073466
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An Inverse Class-E Power Amplifier for Ultrasound Transducer

Abstract: An inverse Class-E power amplifier was designed for an ultrasound transducer. The proposed inverse Class-E power amplifier can be useful because of the low series inductance values used in the output matching network that helps to reduce signal distortions. Therefore, a newly designed Class-E power amplifier can obtain a proper echo signal quality. The measured output voltage, voltage gain, voltage gain difference, and power efficiency were 50.1 V, 22.871 dB, 0.932 dB, and 55.342%, respectively. This low volta… Show more

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Cited by 6 publications
(4 citation statements)
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References 95 publications
(87 reference statements)
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“…Figure 4 shows the equivalent circuit model of the harmonic-reduced bias circu DC analysis. According to the voltage divider theory, the DC voltage of the gate (Vgate) ca simply represented by Equation ( 7) [79]. The values of three shunt resistances (RTB1 According to the voltage divider theory, the DC voltage of the gate (V gate ) can be simply represented by Equation ( 7) [79].…”
Section: Equivalent Circuit Analysis Of Bias Circuitsmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 4 shows the equivalent circuit model of the harmonic-reduced bias circu DC analysis. According to the voltage divider theory, the DC voltage of the gate (Vgate) ca simply represented by Equation ( 7) [79]. The values of three shunt resistances (RTB1 According to the voltage divider theory, the DC voltage of the gate (V gate ) can be simply represented by Equation ( 7) [79].…”
Section: Equivalent Circuit Analysis Of Bias Circuitsmentioning
confidence: 99%
“…According to the voltage divider theory, the DC voltage of the gate (Vgate) ca simply represented by Equation ( 7) [79]. The values of three shunt resistances (RTB1 According to the voltage divider theory, the DC voltage of the gate (V gate ) can be simply represented by Equation ( 7) [79]. The values of three shunt resistances (R TB1 , R TB2, and R TB3 ) are much larger than the values of the parallel impedance of the transconductances (g mtb1 , g mtb2 , and g mtb3 ) and drain-source resistances (r dstb1 , r dsb2 , and r dsb3 ) of the transistors, so we can ignore those values.…”
Section: Equivalent Circuit Analysis Of Bias Circuitsmentioning
confidence: 99%
“…This section focuses on a practical approach to power amplifier design, which can be used when selecting components to attain the best power amplifier performance. Although other power amplifiers have been developed, Class-A to Class-F power amplifiers are considered here because these have been widely utilized for WiFi, wireless, ultra-wideband, instrumentation, aerospace, and ultrasound applications [68,69].…”
Section: Classifications Of Power Amplifiersmentioning
confidence: 99%
“…This inevitably requires the power amplifier (PA) to work in the output power back-off (OBO) region, and the traditional PA architecture usually exhibits low efficiency in the OBO region. This will lead directly to a serious reduction in the efficiency of the entire transmitter [ 6 , 7 , 8 , 9 , 10 , 11 ]. As a PA architecture with high OBO efficiency, the Doherty power amplifier (DPA) [ 12 , 13 , 14 , 15 , 16 , 17 , 18 ] has attracted the attention of a large number of researchers due to its simple circuit structure and easy broadband design.…”
Section: Introductionmentioning
confidence: 99%