An Introduction to the Helium Ion Microscope

Notte, John; Ward, Bill; Economou, Nick; Hill, R. N.; Percival, R.M.; Farkas, L.; McVey, Shawn; Seiler, David G.; Diebold, Alain C.; McDonald, Robert; Garner, Charles M.; Herr, Dan; Khosla, Rajinder P.; Secula, Erik M.

doi:10.1063/1.2799423

Cited by 66 publications

(50 citation statements)

References 2 publications

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“…Measurements of the effective SE yield in HIM show variations between 1 for carbon and values as high as 8 for platinum. 28 The number and energy distribution of these ion induced secondary electrons differs from what is found in a SEM. A sharper maximum at lower energies is usually found 38,39 in HIM.…”

Section: Secondary Electronsmentioning

confidence: 88%

“…From the figure, it is evident that the interaction volume relevant for secondary electron (SE) generation of the focused He beam is smaller than for the other two. 28 For the case of a Ga beam, the large cross section of Ga with-in this case-Si leads to substantial scattering in the near surface region relevant for the SE signal generation. For a low energy electron beam-needed to simultaneously optimize resolution and surface sensitivity in SEM-electron-electron scattering in the sample widens the beam dramatically in the first few nanometers deteriorating the achievable resolution.…”

Section: A Working Principlementioning

confidence: 99%

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Helium ion microscopy

Hlawacek

Veligura

Gastel

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

208

155

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Helium ion microcopy based on gas field ion sources represents a new ultrahigh resolution microscopy and nanofabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nanostructures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review.

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Section: Secondary Electronsmentioning

confidence: 88%

Section: A Working Principlementioning

confidence: 99%

Helium ion microscopy

Hlawacek

Veligura

Gastel

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

208

155

View full text Add to dashboard Cite

show abstract

“…The quantum mechanical wavelength contribution can be neglected for ions (see Table 1 ). In the critical regime dominated by chromatic aberration, the energy spread of He + ions from the ALIS is in the range 0.25–0.5 eV FWHM, which is one order of magnitude less than for Ga + ions from the LMIS [ 29 – 30 ]. For 100 eV electrons the wavelength is more than 10% of the target 1 nm resolution.…”

Section: Reviewmentioning

confidence: 99%

Charged particle single nanometre manufacturing

Prewett¹,

Hagen²,

Lenk³

et al. 2018

Beilstein J. Nanotechnol.

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Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

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“…Whereas in previous studies, the modification of CNTs has been carried out using various dedicated experimental setups for ion-irradiation, HIM emerges as specially well suited for targeted modification and visualisation of such materials. Therefore, the goal of the present work is to investigate the structural modifications of MWCNTs by low energy He + and Ne + ion irradiation for fluences of 10 14 to 10 18 ions/cm 2 , i.e., for imaging conditions found on the HIM [ 44 – 46 ]. We present a correlative approach in which ion-irradiation-induced modifications are characterised by Raman spectroscopy and TEM imaging, and the experimental results are compared to numerical simulations to explain the different observations and to discuss the irradiation of suspended vs deposited MWCNTs and the influence of the thickness of a layer of suspended MWCNTs on the modifications.…”

Section: Introductionmentioning

confidence: 99%

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

Eswara¹,

Audinot²,

Adib³

et al. 2018

Beilstein J. Nanotechnol.

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The mechanical, structural, electronic and magnetic properties of carbon nanotubes can be modified by electron or ion irradiation. In this work we used 25 keV He+ and Ne+ ion irradiation to study the influence of fluence and sample thickness on the irradiation-induced damage of multiwalled carbon nanotubes (MWCNTs). The irradiated areas have been characterised by correlative Raman spectroscopy and TEM imaging. In order to preclude the Raman contribution coming from the amorphous carbon support of typical TEM grids, a new methodology involving Raman inactive Au TEM grids was developed. The experimental results have been compared to SDTRIMSP simulations. Due to the small thickness of the MWCNTs, sputtering has been observed for the top and bottom side of the samples. Depending on thickness and ion species, the sputter yield is significantly higher for the bottom than the top side. For He+ and Ne+ irradiation, damage formation evolves differently, with a change in the trend of the ratio of D to G peak in the Raman spectra being observed for He+ but not for Ne+. This can be attributed to differences in stopping power and sputter behaviour.

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An Introduction to the Helium Ion Microscope

Cited by 66 publications

References 2 publications

Helium ion microscopy

Helium ion microscopy

Charged particle single nanometre manufacturing

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

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