Full Paper: Plasma enhanced chemical vapor deposition was used to deposit organosilicate glass (OSG) thin films from trimethylmethoxysilane, dimethyldimethoxysilane, and methyltrimethoxysilane. Depositions were performed from the pure OSG precursor, as well as from mixtures where either oxygen or hydrogen was added to the gas feed. These films were analyzed via Fourier transform infrared spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements. Low-k OSG thin films from methylmethoxysilanes and hydrogen were deposited via a low power, W/FM from 10.0 to 10.5 J/g dependent upon OSG precursor, PECVD process resulting in material dielectric constants ranging from 2.84 to 3.18.