2005
DOI: 10.1016/j.jcrysgro.2004.10.109
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An intermittent transition to chaotic flow by crystal rotation during Czochralski growth

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Cited by 8 publications
(5 citation statements)
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“…Indeed, the temperature gradient between the crucible and the crystal affects significantly the flow in the crucible, particularly in the close vicinity of the crystal growth interface [37]. More recently, an intermittent transition to chaotic flow has also been observed in a Cz system, for which chaotic temperature fluctuations have been detected near the crystal-melt interface [38].…”
Section: Resultsmentioning
confidence: 99%
“…Indeed, the temperature gradient between the crucible and the crystal affects significantly the flow in the crucible, particularly in the close vicinity of the crystal growth interface [37]. More recently, an intermittent transition to chaotic flow has also been observed in a Cz system, for which chaotic temperature fluctuations have been detected near the crystal-melt interface [38].…”
Section: Resultsmentioning
confidence: 99%
“…As the crystal counter‐rotation rate increases, the thermal fluctuation near the crystal edge is also reduced . An intermittent transition to chaotic flow in the melt in a Cz model‐growth system has been revealed by experiments . It is found that this transition occurs at a certain critical crystal rotation rate and is characterized by bursts of temperature drops near the crystal‐melt interface.…”
Section: Introductionmentioning
confidence: 97%
“…Takagi et al (2014) investigated the combined effects of pool rotation and applied magnetics field on HTWs. In the crystal growth process, rotation is used as a common means to acquire a more symmetric temperature field in the time-average, mix the melt and control the crystal-melt interface shape (Schwabe and Sumathi 2005). Liu and Kakimoto (2008) found that the interface deflection changes from non-uniformity in the azimuthal direction to an axisymmetric distribution with increasing crystal rotation rate in a Cz-Si system by the numerical simulation.…”
Section: Introductionmentioning
confidence: 99%