1975 International Electron Devices Meeting 1975
DOI: 10.1109/iedm.1975.188962
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An integrated surface wave device using silicon MOSFETs and ZnO film transducers

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Cited by 2 publications
(2 citation statements)
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“…CPAR consists primarily of drain to substrate junction capacitance , CDB, drai n to gate overlap capacitance, COD, both associated with the drain junctions of MOSFET detectors, and CDL, t he capacitance of the drain current summing line. Al though equation (4) indicates the desirability of low g values, equation ( 10) says that g must be sufficiently large to keep QL less than 10 for a given ~P AR .…”
Section: A Piezoelectric Film Layer Transducermentioning
confidence: 99%
“…CPAR consists primarily of drain to substrate junction capacitance , CDB, drai n to gate overlap capacitance, COD, both associated with the drain junctions of MOSFET detectors, and CDL, t he capacitance of the drain current summing line. Al though equation (4) indicates the desirability of low g values, equation ( 10) says that g must be sufficiently large to keep QL less than 10 for a given ~P AR .…”
Section: A Piezoelectric Film Layer Transducermentioning
confidence: 99%
“…The first was a 31-bit bi-phase matched filter with a 6 X 31 ROM stored code address to the I --. & piezoresistive taps.1- 3 In the second development shift register and bucket brigade circuitry were added to control tap phase and amplitude. 4 - 7 The most recent development, described in this report, addressed the limitations uncovered in the previous programs.…”
Section: Inputmentioning
confidence: 99%