“…CPAR consists primarily of drain to substrate junction capacitance , CDB, drai n to gate overlap capacitance, COD, both associated with the drain junctions of MOSFET detectors, and CDL, t he capacitance of the drain current summing line. Al though equation (4) indicates the desirability of low g values, equation ( 10) says that g must be sufficiently large to keep QL less than 10 for a given ~P AR .…”