An Integrated SI Bipolar RF Transceiver For A Zero IF 900 MHZ GSM Digital Mobile Radio Single Chip RF Up And RF Down Convertor Of A Hand Portable Phone

Sevenhans, J.; Vanwelsenaers, A.; Wenin, J.; Baro, J.

doi:10.1109/vlsic.1991.760082

Cited by 20 publications

(1 citation statement)

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“…8. Measured port to port isolation of the test structure shown in Fig.7 Assuming power referenced to 50Q '' Assuming power referenced to 50Q 17 The substrate must be well grounded since it is a collector of the parasitic signals from the active and passive devices located directly above it.…”

Section: Signal Isolationmentioning

confidence: 99%

Building blocks for digital wireless communications in sub-micron technologies: an overview

Finol

Durec²,

Lovelace³

Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems. ICCDCS 98. On the 70th A

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This paper presents an overview of both the basic building blocks and process technologies associated with silicon ICs for personal wireless communications. The technical challenges to achieve higher levels of RF monolithic integration at a low cost and with low power dissipation in battery-powered portable transceivers are presented. Specific emphasis will be given to applications in the 1 to 2 GHz range of carrier frequencies.

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Section: Signal Isolationmentioning

confidence: 99%

Building blocks for digital wireless communications in sub-micron technologies: an overview

Finol

Durec²,

Lovelace³

Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems. ICCDCS 98. On the 70th A

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Mixed‐Signal CMOS RF Integrated Circuits

Steyaert

Reynaert

2005

Encyclopedia of RF and Microwave Engineering

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The world of wireless communication and its applications have begun to grow rapidly. The driving force behind this lies in the introduction of digital coding and digital signal processing in wireless communications. This digital revolution is driven by the development of high‐performance, low‐cost CMOS technologies that allow for the integration of an enormous amount of digital functions on a single die. As CMOS is mainly a digital technology, placing all digital functions on a single die is merely a matter of handing the system complexity. To achieve a truly single‐chip solution, the analog part also has to be integrated in CMOS . The telecommunication market is generally considered to be a business where a single‐chip solution in a cheap ( CMOS ) technology results in a huge cost benefit; the main reason is the high volume of user equipment. Furthermore, in these systems, small size, low board area, low power consumption, and high talktime are crucial, and therefore it is of utmost importance to achieve a high level of integration. This trend toward single‐chip, fully integrated systems can clearly be seen in the development of RF systems such as GSM , EDGE , Bluetooth, and wireless LAN . In all these sytems, the analog part mainly consists of an RF front end. Deep submicrometer technologies allow for the operation frequency of CMOS circuits above 1 GHz, which opens the way to fully integrated RF systems. Several research groups have developed high‐performance downconverters, low‐phase‐noise voltage‐controlled oscillators, and dual‐modulus prescalers in standard CMOS technologies. The research has already demonstrated fully integrated receivers and synthesizers with no external components, nor tuning or trimming. Further research on low‐noise amplifiers, power amplifiers, and synthesizers has resulted in fully integrated CMOS RF transceivers for DCS1800, Bluetooth, and wireless LAN . In this article, we focus on the evolution from the well‐known heterodyne receiver topology to the zero‐ and low‐IF topology used in modern receivers. We also discuss the interaction between the analog part and the digital part regarding substrate noise and decoupling.

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Towards the Full Integration of Wireless Front-End Circuits in Deep-Submicron Technologies

Steyaert

Circuits and Systems for Wireless Communications

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Research into the potentials of CMOS technologies for RF applications has been growing enormously in the past few years. The trend towards deep sub-micron technologies allows operation frequencies of CMOS circuits above 1 GHz, which opens the way to integrated CMOS RF circuits. Several research groups have developed high performance down-converters, low phase noise voltage-controlled oscillators and dualmodulus pre-scalers in standard CMOS technologies. Research has already resulted in fully integrated receivers and VCO circuits with no external components, neither tuning nor trimming. Further research on low noise amplifiers, up-converters and synthesisers has recently resulted in fully integrated CMOS RF transceivers for DCS-1800 applications.

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An Integrated SI Bipolar RF Transceiver For A Zero IF 900 MHZ GSM Digital Mobile Radio Single Chip RF Up And RF Down Convertor Of A Hand Portable Phone

Cited by 20 publications

References 1 publication

Building blocks for digital wireless communications in sub-micron technologies: an overview

Building blocks for digital wireless communications in sub-micron technologies: an overview

Mixed‐Signal CMOS RF Integrated Circuits

Towards the Full Integration of Wireless Front-End Circuits in Deep-Submicron Technologies

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