An Integrated Design Environment for Semiconductors

Gough, P.A.

doi:10.1007/978-3-7091-9315-0_7

Cited by 3 publications

(1 citation statement)

References 18 publications

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“…As the demand ofthese tools is continuously grown, the tools themselves have matured into a system providing an end-to-end simulation for process to circuit design level. All TCAD developers and vendors, however, stated that an accurate and efficient semiconductor device modeling (simulation) is a corner stone in all TCAD systems, environments, and frameworks [1][2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

On the accuracy and computational efficiency of physical simulators used for characterizing ultra-small gate-length FETs

Abou‐Elnour

2003

SPIE Proceedings

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A rigorous two-dimensional physical device simulator is developed to characterize the operation ofultra-small and highly doped semiconductor devices. To allow a better understanding ofthe device behavior, the physical phenomena which are taking place inside these devices are accurately modeled and included in the simulator. Implicit and explicit numerical schemes are applied to self-consistently solve the model equations and the effects ofboth schemes on the computational efficiency of the simulator are discussed. Finally, the obtained results from the simulator are compared with experimental characteristics ofa device with similar structure.

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