An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

“…The AFCM, including the current-voltage and the capacitance-voltage models [5] and [6], respectively, was described in Verilog-A language, and used in SmartSpice from Silvaco, to simulate the analyzed circuits. As already indicated, the AFCM includes the extrinsic effects of the overlaps on the internal capacitances of the transistors shown in Fig.…”

“…The extraction of the required model parameters was done as reported in [5,6], after which obtained parameters were introduced in the simulator. The extracted values are shown on Table I.…”

“…Recently, we presented and validated a current-voltage (I-V) model [5] as well as, a specific analytical full capacitance-This work was supported by CONACYT projects 237213 and 236887, the H2020 program of the European Union under contract 645760 (DOMINO), by contract ''Thin Oxide TFT SPICE Model" (T12129S) with Silvaco Inc., by ICREA Academia 2013 from ICREA Institute and the Spanish Ministry of Economy and Competitiveness through project TEC2015-67883-R GREENSENSE). The authors acknowledge Holst Centre/TNO for providing the TFT devices.…”

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

“…The second modelling approach for AOS TFTs considers initially two exponential DOS [73][74][75]. One of the exponential terms accounts for the deep states and the other one for the acceptor states [76,77,78,79], as in a-Si:H TFTs [80,81,82].…”

“…T is the operation temperature of the device under study. In [75] an expression for µ FET0 is given, in terms of the band mobility, γ, trap density and Fermi potential, and density of states in the bottom of the conduction band. The saturation modulation parameter (α S ) defines the saturation voltage as =∝ ( − ).…”