An insight into the charge carriers transport properties and electric field distribution of CH3NH3PbBr3 thick single crystals

Baussens, Oriane; Maturana, Loli; Amari, Smaïl; Zaccaro, Julien; Verilhac, Jean‐Marie; Hirsch, Lionel; Gros-Daillon, Eric

doi:10.1063/5.0011713

Cited by 19 publications

(34 citation statements)

References 11 publications

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“…Here, electronic conductivity of the measured single crystals is in the order of 10 −8 Ω −1 cm −1 . High electronic mobility has been measured using laser time-of-flight techniques in our samples μ e = 13 cm 2 V −1 s −1 , [34] in accordance with previous analysis on perovskite single crystals. [35] These mobility values allow us to infer a background carrier density n = 1.3 × 10 10 cm −3 , that also agreed with previous estimations.…”

Section: Resultssupporting

confidence: 89%

Moving Ions Vary Electronic Conductivity in Lead Bromide Perovskite Single Crystals through Dynamic Doping

García-Batlle

Baussens

Amari

et al. 2020

Adv Elect Materials

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encountered in solar cell engineering. One of them is caused by the presence of mobile ions and how these species alter the internal electrical field, interact with the contact materials, or modulate electronic properties. [3-6] Upon biasing, charged moving ions accumulate in the vicinity of the outer interfaces causing electrical field partial shielding. [7-9] It has also been reported how intrinsic defects chemically react with the electrodes giving rise to losses in performance and device instabilities. [10,11] The occurrence of polarized interfaces in hybrid perovskite-based electronic devices was proposed [12] as an explaining mechanism for the measured excess capacitance at low frequencies. In dark conditions, mobile ions pile up at outer interfaces forming double layer-like structures in the vicinity of the perovskite/contact interface. [13,14] Excess dark capacitance of order 1-10 μF cm −2 can be readily explained in this way. In addition to purely electrostatic approaches for the interfacial phenomena, it is known that chemical reactions between mobile ions and contacting materials might give rise to the formation of dipole-like structures. [15,16] Also, deviations from stable electrical characteristics (i.e., hysteresis in current density-voltage J-V or non-ohmic response) have previously been correlated with the dynamics of migrating ions that interact with the contacts. [14,15,17] A survey about the chemical reactivity of the perovskite/contact materials can be found elsewhere. [14] In this sense, the kinetics of electrode charging may be understood not only Metal halide perovskite single crystals are being explored as functional materials for a variety of optoelectronic applications. Among others, solar cells, field-effect transistors, and X-and γ-ray detectors have shown improved performance and stability. However, a general uncertainty exists about the relevant mechanisms governing the electronic operation. This is caused by the presence of mobile ions and how these defect species alter the internal electrical field, interact with the contact materials, or modulate electronic properties. Here, a set of high-quality thick methylammonium lead tribromide single crystals contacted with low-reactivity chromium electrodes are analyzed by impedance spectroscopy. Through examination of the sample resistance evolution with bias and releasing time, it is revealed that an interplay exists between the perovskite electronic conductivity and the defect distribution within the crystal bulk. Ion diffusion after bias removing changes the local doping density then governing the electronic transport. These findings indicate that the coupling between ionic and electronic properties relies upon a dynamic doping effect caused by moving ions that act as mobile dopants. In addition to electronic features, the analysis extracts values for the ion diffusivity in the range of 10 −8 cm 2 s −1 in good agreement with other independent measurements.

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Section: Resultssupporting

confidence: 89%

Moving Ions Vary Electronic Conductivity in Lead Bromide Perovskite Single Crystals through Dynamic Doping

García-Batlle

Baussens

Amari

et al. 2020

Adv Elect Materials

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“…For example, the dispersive law gives an overestimated mobility of 64 cm 2 V −1 s −1 at 7 V, while the MC simulation gives a correct description of the hole drift and mobility (21 cm 2 V −1 s −1 ) at all biases. The drift mobility found in this study is in agreement with electron (0.7-1.4 cm 2 V −1 s −1 ) [59,60] and hole (20-35 cm 2 V −1 s −1 ) [30,[61][62][63][64] mobilities found in the literature. The lower electron mobility values reported in other studies can be explained by the effect of shallow traps on electron transport, also shown in this study.…”

Section: Delaying Effect Of Traps On Holes and Electronssupporting

confidence: 92%

“…Our results demonstrate a suppressed interaction of defects and free carriers which explains the boost in stability and efficiency of singly crystal solar cells. [ 43–93 ] Further improvements in stability and conversion efficiency can be achieved by controlling shallow and deep defects, as demonstrated in this study. Special attention must be given to the collection of free electrons due to the lower electron diffusion length.…”

Section: Effect Of Defects On Optoelectronic Devices and Further Pathways Of Hybrid Perovskite Developmentmentioning

confidence: 86%

Defects in Hybrid Perovskites: The Secret of Efficient Charge Transport

Musiienko

Ceratti

Pipek

et al. 2021

Adv Funct Materials

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The interaction of free carriers with defects and some critical defect properties are still unclear in methylammonium lead halide perovskites (MHPs). Here, a multi-method approach is used to quantify and characterize defects in single crystal MAPbI 3 , giving a cross-checked overview of their properties. Time of flight current waveform spectroscopy reveals the interaction of carriers with five shallow and deep defects. Photo-Hall and thermoelectric effect spectroscopy assess the defect density, cross-section, and relative (to the valence band) energy. The detailed reconstruction of free carrier relaxation through Monte Carlo simulation allows for quantifying the lifetime, mobility, and diffusion length of holes and electrons separately. Here, it is demonstrated that the dominant part of defects releases free carriers after trapping; this happens without non-radiative recombination with consequent positive effects on the photoconversion and charge transport properties. On the other hand, shallow traps decrease drift mobility sensibly. The results are the key for the optimization of the charge transport properties and defects in MHP and contribute to the research aiming to improve perovskite stability. This study paves the way for doping and defect control, enhancing the scalability of perovskite devices with large diffusion lengths and lifetimes.

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“…The value (µτ = 3.3 × 10 −3 cm 2 /V) in monocrystalline diamonds was 2−3 orders of magnitude greater than that in polycrystalline diamonds affected by carrier trapping at grain boundaries. This result indicates the high potential of monocrystalline diamonds among other candidate materials, such as high-purity germanium, microcrystalline silicon 15 , CdZnTe 16 , metal halide perovskites 17 , and h-BN 18 . However, the charge collection method returns the product of µ and τ , and these two parameters are not separable.…”

mentioning

confidence: 87%

Low-temperature mobility-lifetime product in synthetic diamond

Konishi

Akimoto

Matsuoka

et al. 2020

Applied Physics Letters

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Mobility-lifetime (µτ ) product is an important parameter that determines the performance of electronic and photonic devices. To overcome the previously reported difficulties in measuring the µτ product at cryogenic temperatures, we implement a time-resolved cyclotron resonance method to determine the carrier lifetime τ . After clarifying the difference between the AC and DC mobilities measured by the cyclotron resonance and time-of-flight methods, respectively, we demonstrate an inverse temperature dependence of the µτ product. The highest recorded µτ product of 0.2 cm 2 /V, which is approximately 100 times the room-temperature value, was obtained at 2 K for chemical-vapor-deposition diamond of the highest currently available purity.

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An insight into the charge carriers transport properties and electric field distribution of CH3NH3PbBr3 thick single crystals

Cited by 19 publications

References 11 publications

Moving Ions Vary Electronic Conductivity in Lead Bromide Perovskite Single Crystals through Dynamic Doping

Moving Ions Vary Electronic Conductivity in Lead Bromide Perovskite Single Crystals through Dynamic Doping

Defects in Hybrid Perovskites: The Secret of Efficient Charge Transport

Low-temperature mobility-lifetime product in synthetic diamond

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