An InP/InGaAs/InP DHBT with high power density at Ka-band

Wang, Che Ming; Huang, Shih-Hui; Huang, Wei-Hsin; Hsin, Yue-Ming

doi:10.1016/j.sse.2007.06.009

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…The direct bandgap of InP is useful in photonic device applications, such as InP laser/modulator/photodetector systems for nextgeneration optical communications [8][9][10][11] . Accompanying the demand for miniaturization and high-power operation [12][13][14][15][16][17] , the power density of these devices has drastically increased. Consequently, InP-based electronic devices suffer from heat dissipation problems due to the low thermal conductivity of 68 W/m/K (Si: 130 W/m/K) [18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Low-temperature Direct Bonding of Inp and Diamond Substrates Under Atmospheric Conditions

Matsumae

Takigawa

Kurashima

et al. 2021

Preprint

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An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

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Section: Introductionmentioning

confidence: 99%

Low-temperature Direct Bonding of Inp and Diamond Substrates Under Atmospheric Conditions

Matsumae

Takigawa

Kurashima

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…The direct bandgap of InP is useful in photonic device applications, such as InP laser/modulator/photodetector systems for next-generation optical communications [8][9][10][11] . Accompanying the demand for miniaturization and high-power operation [12][13][14][15][16][17] , the power density of these devices has drastically increased. Consequently, InP-based electronic devices suffer from heat dissipation problems due to the low thermal conductivity of 68 W/m/K (Si: 130 W/m/K) [18][19][20] .…”

mentioning

confidence: 99%