2011
DOI: 10.1063/1.3592979
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An initial phase of Ge hut array formation at low temperature on Si(001)

Abstract: We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the coverage of about 5.1 \r{A} (~3.6 ML). Further development of hut arrays consists in simultaneous growth of the formerly appeared clusters and nucleation of new ones resulting in gradual rise of hut number density with increasing surface coverage. Huts nucleate reconstructi… Show more

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Cited by 19 publications
(47 citation statements)
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“…1,4,10,15,28 Our STM data demonstrate these two cluster forms to grow from different types of nuclei which have different structures and symmetries: 15,18 Fig. 1 presents STM images of these nuclei and models of arrangement of their atoms on WL.…”
Section: B Summary Of Main Resultsmentioning
confidence: 99%
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“…1,4,10,15,28 Our STM data demonstrate these two cluster forms to grow from different types of nuclei which have different structures and symmetries: 15,18 Fig. 1 presents STM images of these nuclei and models of arrangement of their atoms on WL.…”
Section: B Summary Of Main Resultsmentioning
confidence: 99%
“…7) when the clusters are small enough and the distances between them are large in comparison with their dimensions. [15][16][17][18] In these conditions, if a flux of Ge atoms arriving on the surface is sufficient to feed all the growing huts and a competition between huts for Ge is actually absent, all pyramids, both stable and metastable, obtain enough material to complete their facets and grow remaining in the array. Pyramids of 6 ML high are stable but they form at greater coverages, from 6 to 8Å, when all huts become bigger, more actively consume Ge and gaps between then become smaller.…”
Section: A Models Of Uniform and Non-uniform Growthmentioning
confidence: 99%
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